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ERA22-04

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric Compare View All

ERA22-04 Overview

Rectifier Diode,

ERA22-04 Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
ERA22-0
2---E
RA22-10
VO LT AG E RANG E:
200
--- 1000 V
CURRENT : 0.5 A
FAST RECOVERY RECT IFIER
D O - 41
D iffus ed junction
Low leakage
Low forw ard voltage drop
H igh current capability
Eas ily cleaned w ith Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries
U/L
recognition
94V -0
MECHANICAL DATA
C as e:JED EC D O-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: C olor band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
M AXIM UM RAT ING S AND ELECT RICAL CHARACT ERIST ICS
R atings at 25
am bient tem perature unles s otherw is e s pecified.
Single phas e,half w ave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
ERA22
-02
Max imum recurrent peak rev erse v oltage
Max imum RMS voltage
Max imum DC blocking voltage
Max imum av erage f orw ard rectif ied c urrent
9.5mm lead length,
@T
A
=75
ERA22
-04
400
280
400
ERA22
-06
600
420
600
0.5
ERA22
-08
800
560
800
ERA22
-10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F (AV)
200
140
200
Peak f orw ard surge current
8.3ms single half -sine-w av e
s uperimposed on rated load
@T
J
=125
I
F SM
20.0
A
Max imum ins tantaneous f orw ard voltage
@ 0.5 A
Max imum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
J A
T
J
T
STG
1.3
5.0
100.0
400
12
55
-55----+150
-55----+150
V
A
ns
pF
/W
Max imum reverse recov ery time (Note1)
Ty pical junction capac itance
Ty pical thermal resistanc e
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE: 1. Meas ured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261053
BL
GALAXY ELECTRICAL
1.

ERA22-04 Related Products

ERA22-04 ERA22-08 ERA22-02 ERA22-06 ERA22-10
Description Rectifier Diode, Rectifier Diode, 1 Element, 0.5A, 800V V(RRM), Rectifier Diode, Rectifier Diode, 1 Element, 0.5A, 600V V(RRM), Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM),
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown unknown
Is it Rohs certified? - conform to - conform to conform to
Configuration - SINGLE - SINGLE SINGLE
Diode type - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.3 V - 1.3 V 1.3 V
Maximum non-repetitive peak forward current - 20 A - 20 A 20 A
Number of components - 1 - 1 1
Maximum operating temperature - 150 °C - 150 °C 150 °C
Maximum output current - 0.5 A - 0.5 A 0.5 A
Maximum repetitive peak reverse voltage - 800 V - 600 V 1000 V
Maximum reverse recovery time - 0.4 µs - 0.4 µs 0.4 µs
surface mount - NO - NO NO

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