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BTY79-600R

Description
Silicon Controlled Rectifier, 10000mA I(T), 600V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size358KB,9 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BTY79-600R Overview

Silicon Controlled Rectifier, 10000mA I(T), 600V V(DRM),

BTY79-600R Parametric

Parameter NameAttribute value
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time35 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current30 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current75 mA
Maximum leakage current3 mA
On-state non-repetitive peak current150 A
Maximum on-state voltage2 V
Maximum on-state current10000 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage600 V
surface mountNO
Trigger device typeSCR

BTY79-600R Related Products

BTY79-600R BTY79-400R BTY79-800R
Description Silicon Controlled Rectifier, 10000mA I(T), 600V V(DRM), Silicon Controlled Rectifier, 10000mA I(T), 400V V(DRM) Silicon Controlled Rectifier, 10000mA I(T), 800V V(DRM),
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Nominal circuit commutation break time 35 µs 35 µs 35 µs
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 30 mA 30 mA 30 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 75 mA 75 mA 75 mA
Maximum leakage current 3 mA 3 mA 3 mA
On-state non-repetitive peak current 150 A 150 A 150 A
Maximum on-state voltage 2 V 2 V 2 V
Maximum on-state current 10000 A 10000 A 10000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Off-state repetitive peak voltage 600 V 400 V 800 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
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