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KBL10

Description
Bridge Rectifier Diode, 4A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size183KB,3 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
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KBL10 Overview

Bridge Rectifier Diode, 4A, 1000V V(RRM),

KBL10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Production specification
Silicon Bridge
Diodes
FEATURES
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
KBL005--KBL10
Pb
Lead-free
Maximum Ratings
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Output current
@T
A
=50℃
Peak forward surge current
8.3msingle half-sine-wave
superimposed on rated load
I
FSM
150
A
Symbol
V
RRM
V
RMS
V
DC
KBL005
50
35
50
KBL01
100
70
100
KBL02
200
140
200
KB03
300
210
300
KBL04
400
280
400
KBL06
600
420
600
KBL08
800
560
800
KBL10
1000
700
1000
UNITS
V
V
V
I
F(AV)
4.0
A
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
T
J
T
STG
KBL005
KBL01
KBL02
KB03
KBL04
KBL06
KBL08
KBL10
UNITS
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage
@2.0A
Maximum
reverse
current
@T
A
=25℃
Symbol
V
F
KBL005
KBL01
KBL02
KB03
1.0
10
1.0
KBL04
KBL06
KBL08
KBL10
UNITS
V
μ
A
mA
at rated DC blocking voltage @T
A
=100℃
I
R
Document Number: KBL802AA
www.gmicroelec.com
1

KBL10 Related Products

KBL10 KBL04 KBL06 KBL08
Description Bridge Rectifier Diode, 4A, 1000V V(RRM), Bridge Rectifier Diode, 4A, 400V V(RRM), Bridge Rectifier Diode, 4A, 600V V(RRM), Bridge Rectifier Diode, 4A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A
Number of components 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 1000 V 400 V 600 V 800 V
surface mount NO NO NO NO
Is Samacsys - N N N
Base Number Matches - 1 1 1
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