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JAN1N5811

Description
Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size65KB,1 Pages
ManufacturerBkc Semiconductors Inc.
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JAN1N5811 Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon,

JAN1N5811 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.875 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current6 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation5 W
Certification statusNot Qualified
GuidelineMIL-19500/477
Maximum repetitive peak reverse voltage150 V
Maximum reverse current5 µA
Maximum reverse recovery time0.03 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

JAN1N5811 Related Products

JAN1N5811 JAN1N5809 JAN1N5807
Description Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon,
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.875 V 0.875 V 0.875 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 6 A 6 A 6 A
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 5 W 5 W 5 W
Certification status Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/477 MIL-19500/477 MIL-19500/477
Maximum repetitive peak reverse voltage 150 V 100 V 50 V
Maximum reverse current 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.03 µs 0.03 µs 0.03 µs
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Bkc Semiconductors Inc. - Bkc Semiconductors Inc.
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