BBY42
VHF variable capacitance diode
Rev. 02 — 1 October 2004
Product data sheet
1. Product profile
1.1 General description
The BBY42 is a variable capacitance diode, fabricated in planar technology, and
encapsulated in the SOT23 small plastic SMD package.
1.2 Features
s
Excellent linearity
s
Small plastic SMD package
s
C
d(28 V)
: 2.7 pF; ratio: 14.
1.3 Applications
s
Electronic tuning in VHF television tuners, band B up to 460 MHz
s
VCO.
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
anode
n.c.
cathode
3
2
n.c.
3
1
Simplified outline
Symbol
sym047
1
2
SOT23
3. Ordering information
Table 2:
Ordering information
Package
Name
BBY42
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
Philips Semiconductors
BBY42
VHF variable capacitance diode
4. Marking
Table 3:
BBY42
[1]
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Marking table
Marking code
19*
[1]
Type number
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
T
stg
T
j
Parameter
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
Conditions
Min
-
-
−55
−55
Max
30
20
+150
+125
Unit
V
mA
°C
°C
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
R
Parameter
reverse current
Conditions
see
Figure 2
V
R
= 28 V
V
R
= 28 V; T
j
= 85
°C
r
s
C
d
diode series
resistance
diode
capacitance
f = 100 MHz
see
Figure 1
and
3
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 28 V; f = 1 MHz
C
d
(
1V
)
------------------
-
C
d
(
28V
)
[1]
[1]
Min
-
-
-
Typ
-
-
-
Max
10
200
1
Unit
nA
nA
Ω
31
-
2.4
12
-
24
2.7
14
-
-
3
16
pF
pF
pF
capacitance ratio f = 1 MHz
V
R
is the value at which C
d
= 30 pF.
9397 750 13388
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 1 October 2004
2 of 7
Philips Semiconductors
BBY42
VHF variable capacitance diode
7. Graphical data
mbe619
60
C
d
(pF)
40
20
0
10
−1
1
10
V
R
(V)
10
2
f = 1 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
10
3
I
R
(nA)
10
2
mlc816
10
−3
mlc815
TC
d
(K
−1
)
10
−4
10
1
0
20
40
60
80
T
j
(°C)
100
10
−5
10
−1
1
10
V
R
(V)
10
2
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values.
9397 750 13388
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 1 October 2004
3 of 7
Philips Semiconductors
BBY42
VHF variable capacitance diode
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 4. Package outline.
9397 750 13388
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 1 October 2004
4 of 7
Philips Semiconductors
BBY42
VHF variable capacitance diode
9. Revision history
Table 6:
BBY42_2
Modifications:
BBY42_1
Revision history
Release date
20041001
Data sheet status
Product data sheet
Change notice
-
Order number
9397 750 13388
Supersedes
BBY42_1
Document ID
•
•
Converted to TDM format.
Adding Ordering information and Marking.
Product Specification
-
-
-
19960503
9397 750 13388
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 1 October 2004
5 of 7