FPNH10
FPNH10
C
BE
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100
µA
to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25
30
3.0
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPNH10
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000
Fairchild Semiconductor Corporation
FPNH10 Rev. A
FPNH10
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
25
30
3.0
100
100
V
V
V
nA
nA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 4.0 mA, V
CE
= 10 V
I
C
= 4.0 mA, I
B
= 0.4 mA
I
C
= 4.0 mA, V
CE
= 10 V
60
0.5
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
rb
rb’C
c
Current Gain - Bandwidth Product
Collector-Base Capacitance
Common-Base Feedback
Capacitance
Collector Base Time Constant
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 4.0 mA, V
CB
= 10 V,
f = 31.8 MHz
650
0.720
0.34
0.65
9.0
MHz
pF
pF
ps
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
FPNH10
NPN RF Transistor
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
100
Vce = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β
= 10
0.15
125 °C
80
60
40
20
0
0.1
125 °C
25 °C
0.1
25 °C
- 40 °C
0.05
- 40 °C
0.2
0.5
1
2
5
10 20
I
C
- COLLECTOR CURRENT (mA)
50
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
20
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
V
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
-
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
- 40 °C
25 °C
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
125 °C
0.6
125 °C
0.4
I
C
1
10
- COLLECTOR CURRENT (mA)
20
0.2
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
P 42
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
Po we r D iss ip ation
vs. Amb ien t Tem pe ra ture
P
D
- PO W ER DISS IPAT IO N (W )
35 0
30 0
25 0
20 0
15 0
10 0
50
0
0
25
50
75
10 0
T
A
- T EMPE RATUR E (
o
C)
12 5
15 0
10
V
CB
= 30V
TO-9 2
1
0.1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
FPNH10
NPN RF Transistor
(continued)
Common Base Y Parameters vs. Frequency
Input Admittance
Y
ib
- INPUT ADMITTANCE (mmhos)
120
80
Y
ob
- OUTPUT ADMITTANCE (mmhos)
12
10
8
6
Output Admittance
V
CE
= 10V
I
C
= 5 mA
g
ib
40
0
-40
-80
V
CE
= 10V
I
C
= 5 mA
b
ob
4
2
0
100
b
ib
g
ob
200
500
f - FREQUENCY (MHz)
P 42 (BASE)
-120
100
200
500
f - FREQUENCY (MHz)
(
S )
1000
1000
Y
fb
- FORWARD ADMITTANCE (mmhos)
Forward Transfer Admittance
120
Y
rb
- REVERSE ADMITTANCE (mmhos)
8
Reverse Transfer Admittance
V
CE
= 10V
b
fb
80
40
0
6
I
C
= 5 mA
4
g
fb
-40
-80
-120
100
V
CE
= 10V
I
C
= 5 mA
-b
rb
2
-g
rb
0
100
200
500
f - FREQUENCY (MHz)
1000
200
500
f - FREQUENCY (MHz)
1000
FPNH10
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Input Admittance
Y
oe
- OUTPUT ADMITTANCE (mmhos)
Y
ie
- INPUT ADMITTANCE (mmhos)
24
20
16
12
V
CE
= 10V
I
C
= 2 mA
Output Admittance
6
V
CE
= 10V
g
ie
5
4
I
C
= 2 mA
b
oe
3
2
1
b
ie
8
4
0
100
g
oe
0
100
200
500
f - FREQUENCY (MHz)
P
(EMITTER)
200
500
f - FREQUENCY (MHz)
1000
1000
Y
fe
- FORWARD ADMITTANCE (mmhos)
Forward Transfer Admittance
Y
re
- REVERSE ADMITTANCE (mmhos)
60
V
CE
= 10V
Reverse Transfer Admittance
1.2
1
0.8
V
CE
= 10V
I
C
= 2 mA
40
20
0
-20
-40
-60
100
g
fe
I
C
= 2 mA
-b
re
0.6
0.4
0.2
0
100
b
fe
200
500
f - FREQUENCY (MHz)
(
)
-g
re
200
500
f - FREQUENCY (MHz)
1000
1000
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