BA157 datasheet, PDF - EEWORLD Datasheet

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BA157: DescriptionRectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size38KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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BA157 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

BA157 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fagor Electrónica
package instruction	PLASTIC PACKAGE-2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	35 A
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Guideline	IEC-134
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal surface	TIN
Terminal form	WIRE
Terminal location	AXIAL

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BA 157........BA 159

1 Amp. Fast Recovery Silicon Diodes

Dimensions in mm.

DO-15

(Plastic)

Voltage

400 to 1000 V.

Current

1.0 A. at 50°C.

•

Fast Recovery Diodes

6.35

± 0.2

58.5 min.

Mounting instructions

1. Min. distance from body to soldering point,

4 mm.

2. Max. solder temperature, 350°C.

3. Max. soldering time, 3,5 sec.

4. Do not bend lead at a point closer than

2 mm. to the body.

•

Diffused junction

•

High current capability

•

The plastic material carries

U/L recognition 94 V-0

•

Terminals: Axial Leads

•

Polarity: Color band denotes cathode

Maximum Ratings, according to IEC publication No. 134

BA 157

BA 158

600

BA 159

1000

V

RRM

I

F(AV)

I

FRM

I

FSM

t

rr

T

j

T

stg

Peak recurrent and non recurrent reverse voltage (V)

Forward current, R load at Tamb = 50 °C

Recurrent peak forward current

10 ms. peak forward surge current at T

j

= 25 °C

Max. reverse recovery

time from

I

F

= 0.5 A

I

R

= 1 A

I

RR

= 0.25 A

400

1A

5A

35 A

150 ns

– 65 to + 125 °C

250 ns

Operating temperature range

Storage temperature range

Electrical Characteristics at Tamb = 25°C

V

F

I

R

C

d

R

thj-a

Forward voltage drop at I

F

= 1 A

Reverse current at V

RRM

at 25

o

C

Capacitance

BA 157

BA 158

BA 159

1.3 V

5µA

2,2 pF

2 pF

1,8 pF

at 1 MHz and V

RRM

Max. thermal resistance (I = 10 mm.)

60° C/W

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