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UFMMT596

Description
Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size98KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UFMMT596 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon

UFMMT596 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.2 V

UFMMT596 Related Products

UFMMT596 UFMMT596TC
Description Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.3 A 0.3 A
Collector-based maximum capacity 10 pF 10 pF
Collector-emitter maximum voltage 200 V 200 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
VCEsat-Max 0.2 V 0.2 V
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