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FMMT619TA

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size361KB,4 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

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FMMT619TA Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

FMMT619TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity20 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment0.625 W
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)165 MHz
VCEsat-Max0.22 V
SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
*
*
*
*
*
*
625mW POWER DISSIPATION
I
C
CONT 3A
12A Peak Pulse Current
Excellent H
FE
Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance;
R
CE(sat)
C
B
E
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
–
PARTMARKING
617
618
619
624
625
R
CE(sat)
50m
at 3A
50m
at 2A
75m
at 2A
-
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
FMMT FMMT FMMT FMMT FMMT
617
618
619
624
625
15
15
5
12
3
20
20
5
6
2.5
50
50
5
6
2
500
625
-55 to +150
125
125
5
3
1
150
150
5
3
1
UNIT
V
V
V
A
A
mA
mW
°C
Operating and Storage Temperature T
j
:T
stg
Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
3 - 149
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