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FMMT619-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size241KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

FMMT619-TP-HF Overview

Small Signal Bipolar Transistor,

FMMT619-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
FMMT619
Features
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power dissipation: P
CM
=0.625W(T
amb
=25 )
Thermal Resistance from Junction to Ambient 357
o
C/W
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:619
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current,
Power Dissipation at Tamb=25
Operating Junction Temperature
Storage Temperature
Rating
50
50
5.0
2.0
350
-55 to +150
-55 to +150
Unit
V
V
V
A
mW
NPN Silicon Planar
High Performance
Transistor
SOT-23
A
D
C
C
B
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100
µAdc,
I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0Vdc)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
(I
C
=1Adc, I
B
=10mAdc)
(I
C
=2Adc, I
B
=100mAdc)
Base-Emitter Saturation Voltage
(I
C
=2Adc, I
B
=50mAdc)
Base-Emitter Voltage
(V
CE
=2Vdc, I
C
=2Adc)
DC Current Gain
(V
CE
=2Vdc, I
C
=10mAdc)
(V
CE
=2Vdc, I
C
=200mAdc)
(V
CE
=2Vdc, I
C
=1Adc)
(V
CE
=2Vdc, I
C
=2Adc)
(V
CE
=2Vdc, I
C
=6Adc)
Transition Frequency
(I
C
=50mAdc, V
CE
=10Vdc, f=100MHz)
Turn-on time
Turn-off time
(V
CC
=10Vdc, I
C
=1Adc, I
B1
=-I
B2
=10mAdc)
Output Capacitance
(V
CB
=10Vdc, f=1.0MHz)
Min
Max
Units
G
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
H
J
50
50
5.0
---
---
---
---
---
---
---
200
300
200
100
---
100
---
---
---
0.1
0.1
0.02
0.2
0.22
1.0
1.0
---
---
---
---
40(typ)
---
170(typ)
750(typ)
Vdc
Vdc
Vdc
uAdc
uAdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
V
BE(sat)
V
BE(ON)
h
FE
Vdc
Vdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
---
f
T
t
(on)
t
(off)
C
ob
MHz
ns
ns
.037
.950
.037
.950
---
20
pF
Revision:
A
www.mccsemi.com
1
of
2
2014/03/18

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FMMT619-TP-HF FMMT619-TP
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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