“SuperSOT”
SOT23 NPN SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – APRIL 97
FEATURES
* 625mW POWER DISSIPATION
* Highest current capability SOT23 Darlington
* Very high hFE - specified at 2A (5K minimum)
- typically 600 at 5A
COMPLEMENTARY TYPE – FMMT734
PARTMARKING DETAIL – 634
FMMT634
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
120
100
12
5
900
625
-55 to +150
UNIT
V
V
V
A
mA
mW
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%.
FMMT634
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
0.67
0.72
0.75
0.82
0.68
0.85
1.5
MIN.
120
TYP.
170
MAX. UNIT
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=80V
V
EB
=7V
V
CES
=80V
I
C
=100mA, I
B
=1mA
I
C
=250mA, I
B
=1mA
I
C
=500mA, I
B
=5mA
I
C
=900mA, I
B
=5mA
I
C
=900mA, I
B
=5mA
I
C
=1A, I
B
=5mA *
I
C
=1A, I
B
=5mA *
I
C
=1A, V
CE
=5V*
I
C
=10mA, V
CE
=5V *
I
C
=100mA, V
CE
=5V *
I
C
=1A, V
CE
=5V *
I
C
=2A, V
CE
=5V *
I
C
=5A, V
CE
=5V *
I
C
=1A, V
CE
=2V *
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=500mA
V
CC
=20V
I
B
=±1mA
*
*
*
*
*†
100
115
V
12
16
V
10
nA
10
nA
100
nA
0.75
0.80
0.85
0.93
—
0.96
1.65
V
V
V
V
V
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
20K
15K
5K
V
1.33
1.5
V
50K
60K
40K
14K
600
24K
140
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
9
290
2.4
20
pF
ns
µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%.
† T
j
=150°C
Embedded System
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