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FZT705TC

Description
Power Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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FZT705TC Overview

Power Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT705TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-223, 4 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
VCEsat-Max2.5 V
SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED HFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE – FZT 605
PART MARKING DETAIL –
FZT705
C
FZT705
E
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
TOT
tj:tstg
TYP.
MAX.
VALUE
-140
-120
-10
-4
-2
2
-55 to +150
UNIT
V
V
V
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
µ
A
µ
A
µ
A
µ
A
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off
Current
Emitter Cut-Off Current
SaturationVoltages
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Transitional
Frequency
Output Capacitance
Switching Times
V
BE(on)
h
FE
3000
3000
3000
2000
160
15
0.6
0.8
MIN.
-140
-120
-10
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
C
=-100mA
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-120V
V
CB
=-120V, T
amb
=100°C
V
CES
=-80V
V
EB
=-8V
I
C
=-1A, I
B
=-1mA
I
C
=-2A, I
B
=-2mA
I
C
=-1A, I
B
=-10mA
I
C
=-1A, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-1A, V
CE
=-5V
I
C
=-2A, V
CE
=-5V
MHz
pF
µ
s
µ
s
V
V
V
V
30000
f
T
C
obo
T
on
T
off
I
C
=-100mA, V
CE
=-10V
f=20MHz
V
EB
=-10V, f=1MHz
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
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