HB56A19A-7H datasheet, PDF - EEWORLD Datasheet

HB56A19A-7H: DescriptionFast Page DRAM Module, 1MX9, 70ns, CMOS, SIMM-30; Categorystorage storage; File Size124KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56A19A-7H Overview

Fast Page DRAM Module, 1MX9, 70ns, CMOS, SIMM-30

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	SIMM
package instruction	, SIP30,.2
Contacts	30
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-T30
JESD-609 code	e0
memory density	9437184 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	9
Number of functions	1
Number of ports	1
Number of terminals	30
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX9
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Encapsulate equivalent code	SIP30,.2
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	20.574 mm
Maximum standby current	0.009 A
Maximum slew rate	0.72 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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