J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J304
J305
V
GS(off)
(V)
−2
to
−6
−0.5
to
−3
V
(BR)GSS
Min (V)
−30
−30
g
fs
Min (mS)
4.5
3
I
DSS
Min (mA)
5
1
FEATURES
D
Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D
Very Low Noise: 3.8 dB (typ) @
400 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
D
High Gain: A
V
= 60 @ 100
mA
BENEFITS
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
APPLICATIONS
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S
1
D
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−30
V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
1
J304/305
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J304
J305
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
b
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
Test Conditions
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 15 V, I
D
= 1 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
=
−20
V, V
DS
= 0 V
T
A
= 100_C
V
DG
= 10 V, I
D
= 1 mA
V
DS
= 10 V, V
GS
=
−6
V
V
GS
= 0 V, I
D
= 300
mA
I
G
= 1 mA , V
DS
= 0 V
Typ
a
−35
Min
−30
−2
5
Max
Min
−30
Max
Unit
V
−6
15
−100
−0.5
1
−3
8
−100
V
mA
pA
nA
pA
W
V
−2
−0.2
−20
2
200
0.7
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
C
iss
C
rss
C
oss
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 100 Hz
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V V
GS
= 0 V f = 1 kHz
V,
V,
50
2.2
0.7
1
10
nV⁄
√Hz
p
pF
50
4.5
7.5
3
mS
mS
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits (Typ)
J304
J305
Parameter
High-Frequency
Common-Source Input Conductance
Common-Source Input Susceptance
Common-Source Output Conductance
Common-Source Output Susceptance
Common-Source Forward Transconductance
Common-Source Power Gain
Noise Figure
Symbol
g
iss
b
iss
g
oss
b
oss
g
fs
G
ps
NF
Test Conditions
V
DS
= 15 V, V
GS
= 0 V
100
MHz
400
MHz
100
MHz
400
MHz
Unit
mS
mS
mS
mS
dB
80
2
60
0.8
4.4
20
1.7
800
7.5
80
3.6
4.2
11
3.8
80
2
60
0.8
3
V
DS
= 15 V V
GS
= 0 V
V,
V
DS
= 15 V, I
D
= 5 mA
R
G
= 1 kW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms,
duty cycle
v2%.
NH
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70236
S-50077—Rev. E, 24-Jan-05
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
g
fs
−
Forward Transconductance (mS)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
50
I
DSS
−
Saturation Drain Current (mA)
16
I
DSS
8
400
r
DS
@
I
D
= 300
mA,
V
GS
= 0 V
g
os
@
V
DS
= 10 V,
V
GS
= 0 V
f = 1 kHz
g os
−
Output Conductance (
µ
S)
40
12
g
fs
6
300
r
DS
g
os
30
8
4
200
20
4
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
2
100
10
0
0
−2
−4
−6
−8
−10
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
0
0
−2
−4
−6
−8
−10
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
100 nA
10 nA
I
G
−
Gate Leakage (A)
Gate Leakage Current
5 mA
g
fs
−
Forward Transconductance (mS)
1 mA
T
A
= 125_C
0.1 mA
10
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
8
T
A
=
−55_C
1 nA
100 pA
6
25_C
5 mA
10 pA
1 pA
0.1 pA
0
4
8
12
T
A
= 25_C
1 mA
0.1 mA
I
GSS
@
125_C
4
125_C
2
I
GSS
@ 25_C
0
16
20
0.1
1
I
D
−
Drain Current (mA)
10
V
DG
−
Drain-Gate Voltage (V)
Output Characteristics
10
V
GS(off)
=
−2
V
8
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
V
GS
= 0 V
6
−0.2
V
−0.4
V
4
−0.6
V
−0.8
V
2
−1.0
V
−1.2
V
−1.4
V
0
2
4
6
8
10
12
15
Output Characteristics
V
GS(off)
=
−3
V
V
GS
= 0 V
9
−0.3
V
−0.6
V
6
−0.9
V
−1.2
V
3
−1.5
V
−1.8
V
0
0
0
2
4
6
8
10
V
DS
−
Drain-Source Voltage (V)
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V
DS
−
Drain-Source Voltage (V)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
3
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
V
GS(off)
=
−2
V
8
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
T
A
=
−55_C
6
25_C
V
DS
= 10 V
8
T
A
=
−55_C
6
25_C
125_C
10
V
GS(off)
=
−3
V
V
DS
= 10 V
Transfer Characteristics
4
125_C
4
2
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
0
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS
−
Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
g
fs
−
Forward Transconductance
(mS)
V
GS(off
)
=
−2
V
V
DS
= 10 V
f = 1 kHz
g
fs
−
Forward Transconductance (mS)
10
Transconductance vs. Gate-Source Voltgage
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
8
T
A
=
−55_C
6
25_C
125_C
8
T
A
=
−55_C
6
25_C
4
4
125_C
2
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
0
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS
−
Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
T
A
= 25_C
240
A
V
−
Voltage Gain
V
GS(off)
=
−2
V
180
V
GS(off)
=
−3
V
80
100
Circuit Voltage Gain vs. Drain Current
g
fs
R
L
A
V
+
1
)
R g
L os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
60
120
40
V
GS(off)
=
−2
V
60
20
V
GS(off)
=
−3
V
0
0.1
1
I
D
−
Drain Current (mA)
10
0
0.1
1
I
D
−
Drain Current (mA)
10
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Document Number: 70236
S-50077—Rev. E, 24-Jan-05
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
5
C
rss
−
Reverse Feedback Capacitance (pF)
f = 1 MHz
4
C
iss
−
Input Capacitance (pF)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
3
f = 1 MHz
2.4
3
V
DS
= 0 V
1.8
V
DS
= 0 V
2
1.2
1
V
DS
= 10 V
0.6
V
DS
= 10 V
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
100
Input Admittance
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
100
Forward Admittance
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
is
g
is
(mS)
10
10
(mS)
g
fs
1
1
−b
fs
0.1
100
200
500
1000
0.1
100
200
500
1000
f
−
Frequency (MHz)
f
−
Frequency (MHz)
Reverse Admittance
10
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
1
(mS)
(mS)
−b
rs
10
Output Admittance
b
os
1
g
os
−g
rs
0.1
0.1
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
0.01
100
0.01
200
500
1000
100
200
500
1000
f
−
Frequency (MHz)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
f
−
Frequency (MHz)
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