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BBY58-06W

Description
Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, SOT-323, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size30KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BBY58-06W Overview

Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, SOT-323, 3 PIN

BBY58-06W Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage10 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Minimum diode capacitance ratio2.8
Nominal diode capacitance18.3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
BBY 58-04W ... BBY 58-06W
Silicon Tunig Diodes
Preliminary data
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
BBY 58-04W
BBY 58-05W
BBY 58-06W
3
2
1
VSO05561
Type
BBY 58-04W
BBY 58-05W
BBY 58-06W
Marking Ordering Code
B4
B5
B6
Q62702-
Q62702-
Q62702-
Pin Configuration
1 = A1
1 = A1
1 = C1
2 = C2
2 = A2
2 = C2
3 = C1/2
3 = A1/2
Package
3 = C1/A2 SOT-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
Value
10
20
-55...+150
-55...+150
Unit
V
mA
°C
V
R
I
F
T
op
T
stg
Semiconductor Group
1
Jan-13-1999

BBY58-06W Related Products

BBY58-06W BBY58-05W BBY58-04W
Description Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, SOT-323, 3 PIN Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, SOT-323, 3 PIN Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, SOT-323, 3 PIN
Parts packaging code SC-70 SC-70 SC-70
package instruction R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Contacts 3 3 3
Manufacturer packaging code SOT323 SOT323 SOT323
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW INDUCTANCE LOW INDUCTANCE LOW INDUCTANCE
Minimum breakdown voltage 10 V 10 V 10 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SERIAL, CENTRE TAPPED, 2 ELEMENTS
Minimum diode capacitance ratio 2.8 2.8 2.8
Nominal diode capacitance 18.3 pF 18.3 pF 18.3 pF
Diode component materials SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 2 2 2
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Varactor Diode Classification HYPERABRUPT HYPERABRUPT HYPERABRUPT
Maker SIEMENS - SIEMENS

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