Pressure sensors
C32 series
Series/Type:
Ordering code:
Date:
Version:
Absolute pressure sensor die
2009-08-03
3
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Absolute pressure sensor die
Preliminary data
AS SEN PD
2009-08-03
3
Pressure sensors
C32 series
EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited
Pressure sensors
C32 series
Preliminary data
Applications
Medical devices
Automotive
Automation
Features
Piezoresistive MEMS technology
Small dimensions: 1.65 × 1.65 mm
Square diaphragm
Measured media (front side):
Dry non-aggressive gases.
Unsuitable for substances which react with
glass, silicon or aluminum.
Whetstone bridge with mV output,
ratiometric to supply voltage
Rated pressure ranges 1.6 up to 40 bar
Outstanding long-term stability
Delivery mode
Tray / foil
Dimensional drawings
1650±100
713
713
300±5
800±20
Absolute pressure sensor die
Note1
125
125
X11
X1
X10
X10
X5
613
763
1650±100
1325
B Note1
713
X2
50±25
X10
X11
X4
p
423
X10
140
allowable edge disruptions
80 µm max.
760
260
electrical diagram:
Si 100
all dimensions in µm
Note1: geometry of diaphragm depend on
specification
X5
1425
glass
BOROFLOAT
TM
R1
X4
R3
R2
X1
R4
X2
X1 :
X2 :
X4 :
X5 :
X10 :
X11 :
Vout+
VDD–
Vout–
VDD+
Substrate
Shield
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 2 of 8
2009-08-03
Pressure sensors
C32 series
Preliminary data
Technical data
Absolute maximum ratings
Parameter
Supply voltage
Maximum supply voltage
Temperature ranges
2)
Absolute pressure sensor die
Symbol
Conditions
Min.
Typ.
Max.
Unit
V
DD
Without damage
1)
10
V
Operating temperature range
Storage temperature range
Pressure ranges
Operating pressure ranges
Over pressure
Burst pressure
T
a
T
st
–40
–40
–40
135
140
150
°
C
°
C
°
C
For t <15 min
3)
p
r
p
ov
p
berst
Absolute pressure
Absolute pressure
Absolute pressure
4)
5)
6)
0 ... 1.6
3
5
0 ... 40
bar
p
r
p
r
Electrical specifications
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Supply voltage / bridge resistance
Operating supply voltage
Total bridge resistance
Temperature coefficient
of total bridge resistance
Output signal @ V
DD
= 5 V
Offset
Sensitivity
Temperature coefficient
of offset
Temperature coefficient
of the sensitivity
Pressure hysteresis
V
0
S
TCV
0
TCV
0
α
S
β
S
pHys
16)
–
+
V
DD
R
S
α
Rs
β
Rs
7)
1.0
8)
5.0
3.3
2.3
5
4.0
2.7
8
V
kΩ
10 /K
10 /K
–6
2
–3
@ 25 °
C
@ 25 °
C
2.6
2.0
3
9)
@ 25 °
C
@ 25 °
C
Unglued
10)
13)
–30
0
30
mV
mV/bar
µV/VK
µV/VK
10 /K
10 /K
% FS
–6
2
–3
See next table
–12
–6
0
0
–2.2
5
12
6
–1.9
8
0.1
11)
@ 25 °
C
15)
–2.5
3
–0.1
Long-term stability (Full scale normal output FSON = 120 mV)
Temperature hysteresis of offset
Temperature cycle drift of offset
High temperature drift of offset
Long term stability of offset
THV
0
TCDV
0
HTDV
0
LTSV
0
17)
17)
17)
17)
–0.2
–0.1
–0.25
–0.3
±0.1
±0.05
±0.05
±0.1
0.2
0.1
0.25
0.3
% FSON
% FSON
% FSON
% FSON
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 3 of 8
2009-08-03
Pressure sensors
C32 series
Preliminary data
Symbols and Terms
1)
2)
Absolute pressure sensor die
3)
4)
5)
6)
7)
Maximum power supply V
DD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
a
This is the operating Temperature range T
a,min
to T
a,max
. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted on a TO39 base are tested over a
reduced measuring temperature range of T
meas,min
to T
meas,max
.
Storage temperature range T
st
If the pressure sensor dies are stored in the temperature range T
st,min
to T
st,max
without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
Operating pressure range p
r
In the operating pressure range 0 to p
r,max
the pressure sensor die output characteristic is as defined in this specification.
Over pressure p
OV
Pressure cycles in the pressure range 0 to p
ov
do not affect the performance of the pressure sensor dies.
Burst pressure p
berst
Up to the burst pressure p
berst
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on wire bonded samples by applying the specified burst pressure for 10 minutes.
The evaluation of this test is done by measuring the bridge resistance or by optical inspection of the diaphragm.
Operating power supply V
DD
The pressure sensor parameters are defined for a power supply voltage of V
DD
= 5 V. In the operating power supply
voltage range V
DD,min
to V
DD,max
the ratiometric parameters r(V
DD
) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
r
(
V
DD
)
=
r(5[ V ])
8)
V
DD
5[ V ]
Total bridge resistance R
S
The total bridge resistance is defined between pad X5 and X2, X3 (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
α
Rs
and
β
Rs
:
The temperature coefficients of resistance are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
The temperature coefficients of first and second order are defined with the polynomial:
9)
R
S
(T)
=
R
S
(T
=
25
°
C )
1
+α
Rs
T
−
25
°
C
+β
Rs
T
−
25
°
C
(
)
(
)
2
10)
11)
The coefficients
α
Rs
and
β
Rs
are calculated using the three measurement points of R
s
(T) at T
meas,min
, T
R
and T
meas,max
.
Offset voltage V
0
The offset voltage V
0
is the output voltage V
out
(p = 0 bar abs) at zero absolute pressure and for a bridge voltage power
supply V
DD
= 5 V. Before anodic glass bonding the offset voltage is tested completely on a wafer (wafer level test
measurement) with limits –25 mV< V
o
< 25 mV.
For design verification V
0
is measured on samples, mounted on a TO39 base by extrapolating the output characteristic
to zero bar. It should be noted that this parameter may be influenced by the assembly.
Temperature coefficient of offset voltage TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
DD
= 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
Assuming the offset voltage is mainly due to induce stress TCV
0
may be calculated by extrapolating using:
V
0
(T )
=
1
+ α
s
(T
−
25
°
C)
+ β
s
(T
−
25
°
C)
2
V
o
(25
°
C)
+
v
1
(T
−
25
°
C)
+
v
2
(T
−
25
°
C)
2
(
)(
)
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 5 of 8
2009-08-03
MCU
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