T-1 (3mm) INFRA-RED EMITTING DIODES
L34SF6C
L34SF7C
L34SF6BT
L34SF7BT
Features
!
MECHANICALLY AND SPECTRALLY MATCHED
Description
SF6 and SF7 Made with Gallium Aluminum Arsenide
Infrared Emitting diodes.
TO THE L-32P3C PHOTOTRANSISTOR.
!
BOTH
WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE HIGH POWER OUTPUT.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: CDA0184
APPROVED: J.LU
REV NO: V.1
CHECKED:
DATE: OCT/21/2001
DRAWN: X.Q.ZHENG
PAGE: 1 OF 4
Selection Guide
Po (m W/s r )
@20m A
Min .
L34SF6C
L34SF6BT
L34SF7C
L34SF7BT
GaAlAs
GaAlAs
GaAlAs
GaAlAs
WATER CLEAR
BLUE TRANSPARENT
WATER CLEAR
BLUE TRANSPARENT
7
7
7
7
Ty p .
15
15
18
18
Po (m W/s r )
@50m A
Min .
10
10
10
10
Ty p .
40
40
45
45
V i ew i n g
An g l e
2θ1/2
5 0
°
5 0
°
5 0
°
5 0
°
Par t No .
Dic e
L en s Ty p e
Note:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at T
)
=25°C
°
It em
Forward Voltage
Reverse Current
Junction Capacitance
Peak Spectral Wavelength
Spectral Bandwidth
P/N
S F6
S F7
S F6
S F7
S F6
S F7
S F6
S F7
S F6
S F7
Sy m b o l
V
F
I
R
C
λ
P
∆λ
Ty p .
1.35
1.4
-
30
30
860
850
50
41
Max .
1.6
1.8
10
10
-
-
-
Un it
V
uA
pF
nm
nm
Co n d it io n
IF=20mA
VR=5V
V=0 f=1MHz
IF=20mA
IF=20mA
Absolute Maximum Ratings at T
)
=25°C
°
It em
Power Dissipation
Forward Current
Peak Forward Current[1]
Reverse Voltage
Operating Temperature
Storage Temperature
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
Sy m b o l
Pt
I
F
I
P
V
R
TA
Tstg
SF6& SF7
100
50
1
5
-40~ +85
-40~ +85
Un it s
mW
mA
A
V
°C
°C
SPEC NO: CDA0184
APPROVED: J.LU
REV NO: V.1
CHECKED:
DATE: OCT/21/2001
DRAWN: X.Q.ZHENG
PAGE: 2 OF 4
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