H11AV1X, H11AV2X, H11AV3X
H11AV1, H11AV2, H11AV3
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package System " GG "
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
1.2
Dimensions in mm
2.54
7.0
6.0
1
2
3
6
5
4
- SMD approved to CECC 00802
Certified to EN60950 by
Nemko - Certificate No. P01102464
DESCRIPTION
The H11AV series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CEO
(70V min)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
3.0
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
70V
70V
6V
50mA
160mW
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB92055
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR)
H11AV1
H11AV2
H11AV3
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
70
70
6
50
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
V
nA
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA
I
C
= 100μA
I
E
= 100μA
V
CE
= 10V
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
20mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , fig 1
I
F
= 10mA, R
L
= 75Ω
Coupled
100
50
20
300
%
%
%
V
V
RMS
V
PK
Ω
0.4
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time, tr
Fall Time, tf
Note 1
Note 2
2
2
μs
μs
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 75Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
17/7/08
DB92055m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
I
F
= 20mA
I
C
= 2mA
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Relative current transfer ratio
10
20
50
Forward current I
F
(mA)
DB92055m-AAS/A3
17/7/08
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