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5SDD08D4800

Description
Rectifier Diode, 1 Phase, 1 Element, 810A, 4800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size64KB,3 Pages
ManufacturerABB
Websitehttp://www.abb.com/
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5SDD08D4800 Overview

Rectifier Diode, 1 Phase, 1 Element, 810A, 4800V V(RRM), Silicon,

5SDD08D4800 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current11000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature160 °C
Minimum operating temperature
Maximum output current810 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4800 V
Maximum reverse current50000 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
V
RSM
=
I
FAVM
=
I
FRMS
=
I
FSM
V
F0
r
F
=
=
=
5200 V
810 A
1270 A
10.5 kA
0.90 V
0.600 mΩ
Rectifier Diode
5SDD 08D5000
Target specification
Doc. No. 5SYA1165-00 Sep. 01
Very low on-state losses
Optimum power handling capability
Blocking
Part Number
V
RRM
V
RSM
I
RRM
5SDD 08D5000
5000 V
5200 V
5SDD 08D4800
4800 V
5000 V
50 mA
5SDD 08D4400
4400 V
4600 V
Conditions
f = 50 Hz,
t
p
= 10ms T
j
= 0-160°C
t
p
= 10ms
V
RRM
T
j
= 160°C
Mechanical data
nom.
F
m
a
Mounting force
min.
max.
11 kN
8 kN
12 kN
Acceleration
Device unclamped
Device clamped
50 m/s
2
100 m/s
2
34 mm
26 mm
0.3 kg
25 mm
14 mm
D
p
H
m
D
s
D
a
Pole-piece diameter
Housing thickness
Weight IGCT
Surface creepage distance
Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.

5SDD08D4800 Related Products

5SDD08D4800 5SDD08D4400
Description Rectifier Diode, 1 Phase, 1 Element, 810A, 4800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 810A, 4400V V(RRM), Silicon,
Maker ABB ABB
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V
JESD-30 code O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 11000 A 11000 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 160 °C 160 °C
Maximum output current 810 A 810 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 4800 V 4400 V
Maximum reverse current 50000 µA 50000 µA
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location END END
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