JANTXV1N645-1/TR datasheet, PDF

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JANTXV1N645-1/TR: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size85KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTXV1N645-1/TR Overview

Rectifier Diode,

JANTXV1N645-1/TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknown
Diode type	RECTIFIER DIODE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED

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EATURES

1N645-1

•

1N645-1

AVAILABLE IN

JAN, JANTX, AND JANTXV

PER MIL-PRF-19500/240

ILICON

ECTIFIER

ETALLURGICALLY

ONDED

ERMETICALLY

EALED

OUBLE

LUG

ONSTRUCTION

AXIMUM

ATINGS AT

°C

Operating Temperature:

Storage Temperature:

Surge Current A, sine 8.3mS:

Total Power Dissipation:

Operating Current:

-65°C to +175°C

5.0A

500mW

400mA, T

= +25°C

Operating Current:

Derating Factor:

D.C. Reverse Voltage (VRWM):

150mA, T

= +150°C

2mA/°C above +25°C

6mA/°C above +150°C

225V

DC E

LECTRICAL

HARACTERISTICS

Ambient

(°C)

Min

Max

Ambient

(°C)

V (dc)

Min

µA

Max

µA

150

-55

400

0.80

0.70

1.00

0.95

1.20

150

225

270(ac)

225

0.050

ESIGN

ATA

Case:

Hermetically sealed glass package per MIL-

PRF-19500/240 DO-35 outline

Lead Material:

Copper clad steel

Lead Finish:

Tin/Lead

Thermal Resistance (R

θJL

250°C/W maximum

at L=.375”

Thermal Impedance (Z

θJX

35°C/W maximum

Marking:

Blue body coat, Black digits.

Polarity:

Cathode end is banded.

AC E

LECTRICAL

HARACTERISTICS AT

25°C

Symbol

Capacitance

@ V

= 4V

Min

Max

RELAND -

ORT

OAD

NNIS,

LARE

PHONE:

TOLL FREE:

FAX:

+353 65 6840044

+186 62 702434

+353 65 6822298

WWW.MICROSEMI.COM

U.S.A. D

OMESTIC

ALES

ONTACT

PHONE:

TOLL FREE:

(617) 926 0404

1 800 666 2999

JANTXV1N645-1/TR Related Products

	JANTXV1N645-1/TR	M55342K06B2F10CST	1N645-1E3	JANTX1N645-1	PHP01206K1290DBTI	JANTX1N645-1TR
Description	Rectifier Diode,	Fixed Resistor, Metal Glaze/thick Film, 0.15W, 2100000ohm, 50V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 0805, CHIP	SWITCHING DIODE	DIODE GEN PURP 225V 400MA DO35	RESISTOR, THIN FILM, 1 W, 0.5 %, 100 ppm, 129 ohm, SURFACE MOUNT, 1206, CHIP	Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-35, HERMETIC SEALED, MICRO MINIATURE, GLASS, C PACKAGE-2
Reach Compliance Code	unknown	unknown	compliant	not_compliant	unknown	compli
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	incompatible
Maker	Microsemi	-	Microsemi	Microsemi	-	Microsemi
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
package instruction	-	SMT, 0805	O-LALF-W2	HERMETIC SEALED, MICRO MINIATURE, GLASS, C PACKAGE-2	SMT, 1206	O-LALF-W2
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	ANTI-SULFUR	METALLURGICALLY BONDED	METALLURGICALLY BONDED	FLAME PROOF	METALLURGICALLY BONDED
Number of terminals	-	2	2	2	2	2
Maximum operating temperature	-	150 °C	-	150 °C	155 °C	150 °C
Minimum operating temperature	-	-65 °C	-	-65 °C	-55 °C	-65 °C
Package form	-	SMT	LONG FORM	LONG FORM	SMT	LONG FORM
surface mount	-	YES	NO	NO	YES	NO

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