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BC846A

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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Small Signal Bipolar Transistor, 0.1A I(C), NPN

BC846A Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.31 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 … BC860
1
2
3
SOT-323
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise noted)
PARAMETER
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
Collector-Emitter Voltage
BC846
BC847 / BC850
BC848 / BC849
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
RATINGS
80
50
30
65
45
30
6
5
100
200
150
-65 ~ +150
UNIT
V
V
CEO
V
V
EBO
Ic
Pc
Tj
T
stg
V
mA
mW
°C
°C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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