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BFY81DCSMG4

Description
Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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BFY81DCSMG4 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

BFY81DCSMG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionSMALL OUTLINE, R-CDSO-N6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JEDEC-95 codeMO-041BB
JESD-30 codeR-CDSO-N6
JESD-609 codee4
Number of components2
Number of terminals6
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
BFY81DCSM
Dimensions in mm (inches).
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.06
(0.025 ± 0.003)
Dual Bipolar NPN Devices in
a hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
Applications
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
Dual Bipolar NPN Devices.
V
CEO
= 45V
I
C
= 0.05A
All Semelab hermetically sealed products can
be processed in accordance with the
requirements of BS, CECC and JAN, JANTX,
JANTXV and JANS specifications.
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 (MO-041BB)
Pinouts
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Base 2
Pin 4 – Collector 2
Pin 5 – Emitter 2
Pin 6 – Emitter 1
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
45
0.05
Units
V
A
-
@ 5/10m (V
CE
/ I
C
)
60M
0.5
Hz
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
2-Aug-02

BFY81DCSMG4 Related Products

BFY81DCSMG4 BFY81DCSM
Description Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
Is it Rohs certified? conform to conform to
Maker TT Electronics plc TT Electronics plc
package instruction SMALL OUTLINE, R-CDSO-N6 HERMETIC SEALED, CERAMIC, LCC2-6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 150 150
JEDEC-95 code MO-041BB MO-041BB
JESD-30 code R-CDSO-N6 R-CDSO-N6
Number of components 2 2
Number of terminals 6 6
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz
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