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ZMY6.8

Description
6.8 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ZMY6.8 Overview

6.8 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB

ZMY6.8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionO-PELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance2 Ω
JEDEC-95 codeDO-213AB
JESD-30 codeO-PELF-R2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Nominal reference voltage6.8 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance5%
Working test current100 mA
Base Number Matches1
ZMY 1…ZMY 200 (1.3 W)
Surface mount Silicon-Zener Diodes
(non-planar technology)
Version 2004-05-13
Maximum power dissipation
Maximale Verlustleistung
2.5
Flächendiffundierte Si-Zener-Dioden
für die Oberflächenmontage
1.3 W
1…200 V
DO-213AB
0.12 g
Nominal Z-voltage – Nominale Z-Spannung
Plastic case MELF
Kunststoffgehäuse MELF
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5.0
Type
Typ
0.5
0.5
Dimensions / Maße in mm
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
see page 18
siehe Seite 18
Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.
Advantages of non-planar Zener-Diodes:
Improved clamping capability
Increased max. zener current I
Zmax
Chips produced with Plasma-EPOS technology
Molded plastic over passivated junction
Vorteile der flächendiffundierten Zener-Dioden:
Hohe Impulsfestigkeit
Hoher max. Arbeitsstrom I
Zmax
Chips hergestellt in Plasma-EPOS-Technologie
Passivierte Chips im Plastik-Gehäuse
Maximum ratings and Characteristics
Power dissipation – Verlustleistung
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Kontaktfläche
T
A
= 50°C
T
A
= 25°C
Grenz- und Kennwerte
P
tot
P
ZSM
T
j
T
S
R
thA
R
thT
1.3 W
1
)
40 W
– 50...+150°C
– 50...+175°C
< 45 K/W
1
)
< 10 K/W
1
) Mounted on P.C. board with 50 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 50 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses – Gemessen mit Impulsen
3
) The ZMY 1 is a diode operated in forward. Hence, the index of all parameters should be “F” instead of “Z”.
The cathode, indicated by a white ring is to be connected to the negative pole.
Die ZMY 1 ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index
“F” anstatt “Z” zu setzten. Die durch den weißen Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.
210

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Description 6.8 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB 9.1 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB 8.2 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB Nominal frequency (f0) Nominal frequency (f0) Nominal frequency (f0) 5.1 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB Nominal frequency (f0) Nominal frequency (f0) Nominal frequency (f0)

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