LF444CJ datasheet, PDF - EEWORLD Datasheet

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LF444CJ: DescriptionIC QUAD OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP14, CERAMIC, DIP-14, Operational Amplifier; CategoryAnalog mixed-signal IC Amplifier circuit; File Size579KB，8 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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LF444CJ Overview

IC QUAD OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP14, CERAMIC, DIP-14, Operational Amplifier

LF444CJ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Parts packaging code	DIP
package instruction	DIP, DIP14,.3
Contacts	14
Reach Compliance Code	unknown
ECCN code	EAR99
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.0001 µA
Maximum bias current (IIB) at 25C	0.0001 µA
Nominal Common Mode Rejection Ratio	95 dB
frequency compensation	YES
Maximum input offset voltage	12000 µV
JESD-30 code	R-GDIP-T14
JESD-609 code	e0
length	19.304 mm
low-bias	YES
low-dissonance	NO
micropower	YES
Nominal Negative Supply Voltage (Vsup)	-15 V
Number of functions	4
Number of terminals	14
Maximum operating temperature	70 °C
Minimum operating temperature
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP14,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	+-15 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Nominal slew rate	1 V/us
Maximum slew rate	1 mA
Supply voltage upper limit	18 V
Nominal supply voltage (Vsup)	15 V
surface mount	NO
technology	BIPOLAR
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	1000 kHz
Minimum voltage gain	15000
width	7.62 mm

LF444CJ Related Products

	LF444CJ	LF444CWM
Description	IC QUAD OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP14, CERAMIC, DIP-14, Operational Amplifier	IC QUAD OP-AMP, 12000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO14, 0.300 INCH, PLASTIC, SOP-14, Operational Amplifier
Is it Rohs certified?	incompatible	incompatible
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）
Parts packaging code	DIP	SOIC
package instruction	DIP, DIP14,.3	SOP, SOP14,.4
Contacts	14	14
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Amplifier type	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.0001 µA	0.0001 µA
Maximum bias current (IIB) at 25C	0.0001 µA	0.0001 µA
Nominal Common Mode Rejection Ratio	95 dB	95 dB
frequency compensation	YES	YES
Maximum input offset voltage	12000 µV	12000 µV
JESD-30 code	R-GDIP-T14	R-PDSO-G14
JESD-609 code	e0	e0
length	19.304 mm	9 mm
low-bias	YES	YES
low-dissonance	NO	NO
micropower	YES	YES
Nominal Negative Supply Voltage (Vsup)	-15 V	-15 V
Number of functions	4	4
Number of terminals	14	14
Maximum operating temperature	70 °C	70 °C
Package body material	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY
encapsulated code	DIP	SOP
Encapsulate equivalent code	DIP14,.3	SOP14,.4
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	+-15 V	+-15 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	2.65 mm
Nominal slew rate	1 V/us	1 V/us
Maximum slew rate	1 mA	1 mA
Supply voltage upper limit	18 V	18 V
Nominal supply voltage (Vsup)	15 V	15 V
surface mount	NO	YES
technology	BIPOLAR	BIPOLAR
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	1000 kHz	1000 kHz
Minimum voltage gain	15000	15000
width	7.62 mm	7.5 mm

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