2SA1943N
Bipolar Transistors
Silicon PNP Triple-Diffused Type
2SA1943N
1. Applications
•
Power Amplifiers
2. Features
(1)
(2)
(3)
High collector voltage: V
CEO
= -230 V (min)
Complementary to 2SC5200N
Recommended for 100-W high-fidelity audio frequency amplifier output stage
3. Packaging and Internal Circuit
1. Base
2. Collector (Heatsink)
3. Emitter
TO-3P(N)
25
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
c
= 25
)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Base current
Collector power dissipation
Junction temperature
Storage temperature
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-230
-230
-5
-15
-1.5
150
150
-55 to 150
W
A
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
Note:
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
Symbol
R
th(j-c)
Max
0.83
Unit
/W
1
2013-02-07
Rev.1.0
2SA1943N
6. Electrical Characteristics
6.1. Static Characteristics (Unless otherwise specified, T
c
= 25
)
25
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
Test Condition
V
CB
= -230 V, I
E
= 0 A
V
EB
= -5 V, I
C
= 0 A
I
C
= -50 mA, I
B
= 0 A
V
CE
= -5 V, I
C
= -1 A
V
CE
= -5 V, I
C
= -7 A
I
C
= -8 A, I
B
= -0.8 A
V
CE
= -5 V, I
C
= -7 A
Min
-230
80
35
Typ.
-1.1
-0.97
Max
-5.0
-5.0
160
-3.0
-1.5
V
V
Unit
µA
6.2. Dynamic Characteristics (Unless otherwise specified, T
c
= 25
)
25
Characteristics
Transition frequency
Collector output capacitance
Symbol
f
T
C
ob
Test Condition
V
CE
= -5 V, I
C
= -1 A
V
CB
= -10 V, I
E
= 0 A, f = 1 MHz
Min
Typ.
30
360
Max
Unit
MHz
pF
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2013-02-07
Rev.1.0
2SA1943N
Fig. 8.6 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4
2013-02-07
Rev.1.0
DSP and ARM Processors
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