VISHAY
BY448.BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
\
Features
• Glass passivated junction
• Hermetically sealed package
Applications
High voltage rectification diode
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
949539
Parts Table
Part
BY448
BY458
Type differentiation
V
R
= 1500 V; I
FAV
= 2 A
V
R
= 1200 V; I
FAV
= 2 A
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
see electrical characteristics
see electrical characteristics
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
I
(BR)R
= 0.4 A
t
p
= 10 ms, half sinewave
Sub type
BY448
BY458
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FAV
T
j
T
stg
E
R
Value
1500
1200
30
2
140
- 55 to +
175
10
Unit
V
V
A
A
°C
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86006
Rev. 5, 07-Jan-03
www.vishay.com
1
BY448.BY458
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Total reverse recovery time
Reverse recovery time
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 140 °C
I
F
= 1 A, - d
iF
/d
t
= 0.05 A/µs
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0,25 A
Test condition
Sub type
Symbol
V
F
I
R
I
R
t
rr
t
rr
Min
Typ.
VISHAY
Max
1.6
3
140
20
2
Unit
V
µA
µA
µs
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
80
60
40
20
0
0
5
10
15
20
25
30
16418
l
I
FAV
– Average Forward Current ( A )
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
T
L
=constant
R
thJA
=100K/W
PCB: d=25mm
94 9101
l – Lead Length ( mm )
T
amb
– Ambient Temperature (
°C
)
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100.000
I
R
– Reverse Current (
m
A )
1000
V
R
= V
RRM
T
j
=150°C
I
F
– Forward Current ( A)
10.000
1.000
0.100
0.010
0.001
100
T
j
=25°C
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25
16419
50
75
100
125
150
16417
V
F
– Forward Voltage ( V )
T
j
– Junction Temperature (
°C
)
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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2
Document Number 86006
Rev. 5, 07-Jan-03
BY448.BY458
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86006
Rev. 5, 07-Jan-03
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