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BZT55A3V9

Description
Zener Diode, 3.9V V(Z), 1%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size96KB,6 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric View All

BZT55A3V9 Overview

Zener Diode, 3.9V V(Z), 1%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BZT55A3V9 Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionGLASS, SIMILAR TO DO-213AA, QUADROMELF-2
Reach Compliance Codeunknown
Other featuresLOW NOISE, VERY HIGH STABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.9 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance1%
Working test current5 mA
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
1 (6)
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