BC337, BC337-25,
BC337-40
Amplifier Transistors
NPN Silicon
Features
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•
These are Pb−Free Devices
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
45
50
5.0
800
625
5.0
1.5
12
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
2
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC33
7−xx
AYWW
G
G
BC337−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
June, 2009
−
Rev. 7
1
Publication Order Number:
BC337/D
BC337, BC337−25, BC337−40
1000
IC, COLLECTOR CURRENT (mA)
1.0 s
1.0 ms
1000
T
J
= 135°C
hFE, DC CURRENT GAIN
100
ms
dc
T
C
= 25°C
100
dc
T
A
= 25°C
V
CE
= 1 V
T
J
= 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED V
CEO
)
3.0
10
30
V
CE
, COLLECTOR-EMITTER VOLTAGE
100
10
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (MA)
1000
Figure 2. Active Region
−
Safe Operating Area
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
V
BE(on)
@ V
CE
= 1 V
0.6
V
BE(sat)
@ I
C
/I
B
= 10
0.6
I
C
= 10 mA
100 mA
300 mA
500 mA
0.4
0.4
0.2
0
0.01
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
1
I
B
, BASE CURRENT (mA)
10
100
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 4. Saturation Region
Figure 5. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1
q
VC
for V
CE(sat)
C, CAPACITANCE (pF)
0
100
C
ib
10
-1
-2
q
VB
for V
BE
C
ob
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
1
0.1
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 6. Temperature Coefficients
Figure 7. Capacitances
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3
BC337, BC337−25, BC337−40
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
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