SOT-89 Plastic-Encapsulate Transistors
B772
SOT-89
1.
BASE
2.
COLLETOR
P
CM:
500
mW (Tamb=25℃)
3.
EMITTER
1
2
3
TRANSISTOR (PNP)
FEATURES
Power dissipation
Collector current
-3
A
I
CM:
Collector-base voltage
-40
V
V
(BR)CBO:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
CLASSIFICATION OF h
FE(1)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
=-2V, I
C
= -100mA
I
C
=-2A, I
B
= -0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V,
Transition frequency
C
=-0.1A
unless otherwise specified)
Test
conditions
MIN
-40
-30
-6
TYP
MAX
UNIT
V
V
V
Ic=-100µA , I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -100 µA, I
C
=0
V
CB
= -40 V, I
E
=0
V
CE
=-30 V, I
B
=0
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
-1
-10
-1
60
32
-0.5
-1.5
400
µA
µA
µA
V
V
f
T
f =
10MHz
50
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
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