MJE210LEADFREE datasheet, PDF - EEWORLD Datasheet

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MJE210LEADFREE: DescriptionPower Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size334KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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MJE210LEADFREE Overview

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

MJE210LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-based maximum capacity	120 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	65 MHz
VCEsat-Max	1.8 V

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MJE200

MJE210

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE200, MJE210

types are complementary silicon transistors designed

for high gain amplifier applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

Θ

JA

Θ

JC

UNITS

V

A

W

°C

°C/W

40

25

8.0

5.0

10

1.0

1.5

15

-65 to +150

83.4

8.34

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=40V

ICBO

VCB=40V, TJ=125°C

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

fT

Cob

VEB=8.0V

IC=10mA

IC=500mA, IB=50mA

IC=2.0A, IB=200mA

IC=5.0A, IB=1.0A

VCE=1.0V, IC=2.0A

VCE=1.0V,

IC=500mA

IC=2.0A

70

45

10

65

25

MAX

100

0.3

0.75

1.8

2.5

1.6

180

UNITS

nA

μA

nA

V

VCE=2.0V, IC=5.0A

VCE=10V, IC=100mA, f=10MHz

VCB=10V, IE=0, f=100kHz (MJE200)

VCB=10V, IE=0, f=100kHz (MJE210)

MHz

80

120

pF

R1 (2-May 2012)

MJE210LEADFREE Related Products

	MJE210LEADFREE	MJE200LEADFREE
Description	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A
Collector-based maximum capacity	120 pF	80 pF
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JEDEC-95 code	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	NPN
Maximum power consumption environment	1.5 W	1.5 W
Maximum power dissipation(Abs)	15 W	15 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	65 MHz	65 MHz
VCEsat-Max	1.8 V	1.8 V

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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