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MJE5852BV

Description
8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size446KB,63 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE5852BV Overview

8A, 400V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE5852BV Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SWITCHMODE Series
PNP Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25
_
C (Typ)
125 ns Inductive Crossover Time @ 25°C (Typ)
Operating Temperature Range – 65 to + 150
_
C
100
_
C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Designer's
Data Sheet
MJE5850
MJE5851*
MJE5852*
*Motorola Preferred Device
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
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Rating
Symbol
MJE5850
300
350
MJE5851
350
400
6.0
8.0
16
4.0
8.0
80
MJE5852
400
450
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter Base Voltage
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
Collector Current — Continuous
Peak (1)
Base Current — Continuous
Peak (1)
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Watts
W/
_
C
0.640
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
TL
Max
Unit
Thermal Resistance, Junction to Case
1.25
275
_
C/W
_
C
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
3–644
Motorola Bipolar Power Transistor Device Data
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