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BF799W-E6327

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size63KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BF799W-E6327 Overview

Transistor

BF799W-E6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.035 A
ConfigurationSingle
Minimum DC current gain (hFE)35
Humidity sensitivity level1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.28 W
surface mountYES
BF799W
NPN Silicon RF Transistor
For linear broadband amplifier
application up to 500 MHz
SAW filter driver in TV tuners
Pb-free (RoHS compliant)
package
1)
Qualified according AEC Q101
3
1
2
Type
BF799W
Maximum Ratings
Parameter
Marking
LKs
1=B
Pin Configuration
2=E
3=C
Package
SOT323
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
20
30
30
3
35
10
280
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
= 107 °C
Junction temperature
Storage temperature
mA
mW
°C
Thermal Resistance
Junction - soldering point
2)
1
Pb-containing
2
For
R
thJS
155
K/W
package may be available upon special request
calculation of
R
thJA please refer to Application Note Thermal Resistance
1
2007-04-20

BF799W-E6327 Related Products

BF799W-E6327 BF799W-E6433
Description Transistor Transistor
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.035 A 0.035 A
Configuration Single Single
Minimum DC current gain (hFE) 35 35
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.28 W 0.28 W
surface mount YES YES
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