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ZMV934TA

Description
VHF BAND, 52.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,6 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

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ZMV934TA Overview

VHF BAND, 52.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZMV934TA Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Minimum breakdown voltage12 V
Processing package descriptionSOD-323, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3300 W
Diode typevariable capacitance diode
frequency bandVERY high frequency
minimum quality factor80
Diode capacitance deviation23.81 %
Rated diode capacitance52.5 pF
Variable capacitance diode classificationHYPERABRUPT
ZC930, ZMV930, ZV931 series
SILICON 12V HYPERABRUPT VARACTOR DIODES
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise performance. Available in
single or dual common cathode format in a wide rage of miniature
surface mount packages.
Features
·
Close tolerance C-V characteristics
·
Octave tuning from 0 to 6V
·
Low I
R
(typically 200pA)
·
Excellent phase noise performance
·
High Q
·
Range of miniature surface mount packages
Applications
·
VCXO and TCXO
·
Wireless communications
·
Pagers
·
Mobile radio
ISSUE 6 - JANUARY 2002
1
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