|
IRFR224TRRPBF |
IRFR224TRLPBF |
IRFR224TRPBF |
| Description |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 |
| Is it lead-free? |
Lead free |
Lead free |
Lead free |
| Is it Rohs certified? |
conform to |
conform to |
conform to |
| Maker |
International Rectifier （ Infineon ） |
International Rectifier （ Infineon ） |
International Rectifier （ Infineon ） |
| Parts packaging code |
TO-252AA |
TO-252AA |
TO-252AA |
| package instruction |
LEAD FREE, PLASTIC, DPAK-3 |
LEAD FREE, PLASTIC, DPAK-3 |
LEAD FREE, PLASTIC, DPAK-3 |
| Contacts |
3 |
3 |
3 |
| Reach Compliance Code |
not_compliant |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
| Other features |
AVALANCHE RATED |
AVALANCHE RATED |
AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) |
130 mJ |
130 mJ |
130 mJ |
| Shell connection |
DRAIN |
DRAIN |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
250 V |
250 V |
250 V |
| Maximum drain current (ID) |
3.8 A |
3.8 A |
3.8 A |
| Maximum drain-source on-resistance |
1.1 Ω |
1.1 Ω |
1.1 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-252AA |
TO-252AA |
TO-252AA |
| JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
| JESD-609 code |
e3 |
e3 |
e3 |
| Humidity sensitivity level |
1 |
1 |
1 |
| Number of components |
1 |
1 |
1 |
| Number of terminals |
2 |
2 |
2 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) |
260 |
260 |
260 |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
| Maximum pulsed drain current (IDM) |
15 A |
15 A |
15 A |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
| surface mount |
YES |
YES |
YES |
| Terminal surface |
MATTE TIN OVER NICKEL |
MATTE TIN OVER NICKEL |
MATTE TIN OVER NICKEL |
| Terminal form |
GULL WING |
GULL WING |
GULL WING |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
| Maximum time at peak reflow temperature |
30 |
30 |
30 |
| transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
| Maximum drain current (Abs) (ID) |
- |
3.8 A |
3.8 A |
| Maximum operating temperature |
- |
150 °C |
150 °C |
| Maximum power dissipation(Abs) |
- |
42 W |
42 W |
| Base Number Matches |
- |
1 |
1 |
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