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IPD13N03LAGBUMA1

Description
Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size544KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IPD13N03LAGBUMA1 Overview

Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN

IPD13N03LAGBUMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0128 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)210 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
IPD13N03LA G
IPS13N03LA G
IPF13N03LA G
IPU13N03LA G
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
I
D
25
12.8
30
V
mΩ
A
Type
IPD13N03LA
IPF13N03LA
IPS13N03LA
IPU13N03LA
Package
Marking
P-TO252-3-11
13N03LA
P-TO252-3-23
13N03LA
P-TO251-3-11
13N03LA
P-TO251-3-1
13N03LA
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
3)
I
D
=24 A,
R
GS
=25
I
D
=30 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
Value
30
30
210
60
6
±20
46
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 2.2
page 1
2008-04-14

IPD13N03LAGBUMA1 Related Products

IPD13N03LAGBUMA1 IPD13N03LA G IPU13N03LA G IPS13N03LA G IPF13N03LA G
Description Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN mosfet N-CH 25v 30a dpak MOSFET N-CH 25V 30A TO-251 MOSFET N-CH 25V 30A IPAK MOSFET N-CH 25V 30A DPAK
FET type - - N channel N channel N channel
technology - - MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) - - 25V 25V 25V
Current - Continuous Drain (Id) at 25°C - - 30A(Tc) 30A(Tc) 30A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) - - 4.5V,10V 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs - - 12.8 milliohms @ 30A, 10V 12.8 milliohms @ 30A, 10V 12.8 milliohms @ 30A, 10V
Vgs (th) (maximum value) when different Id - - 2V @ 20µA 2V @ 20µA 2V @ 20µA
Gate charge (Qg) at different Vgs (maximum value) - - 8.3nC @ 5V 8.3nC @ 5V 8.3nC @ 5V
Vgs (maximum value) - - ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) - - 1043pF @ 15V 1043pF @ 15V 1043pF @ 15V
Power dissipation (maximum) - - 46W(Tc) 46W(Tc) 46W(Tc)
Operating temperature - - -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type - - Through hole Through hole surface mount
Supplier device packaging - - P-TO251-3 PG-TO251-3 P-TO252-3
Package/casing - - TO-251-3 short lead, IPak, TO-251AA TO-251-3 stubbed lead, IPak TO-252-3, DPak (2 leads + tab), SC-63
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