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IRHM7450SED

Description
Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size128KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHM7450SED Overview

Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRHM7450SED Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.57 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 91223C
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7450SE
N-CHANNEL
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
500Volt, 0.51Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Product Summary
Part Number
IRHM7450SE
BV
DSS
500V
R
DS(on)
0.51Ω
I
D
12A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current

PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
‚
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
12
7.0
48
151
1.2
±20
500
12
15
4.2
-55 to 150
Pre-Irradiation
IRHM7450SE
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
g
www.irf.com
1
1/6/99

IRHM7450SED Related Products

IRHM7450SED IRHM7450SEU
Description Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant
Other features HIGH RELIABILITY, RADIATION HARDENED HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (ID) 12 A 12 A
Maximum drain-source on-resistance 0.57 Ω 0.57 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-MSFM-P3 S-MSFM-P3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 48 A 48 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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