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BZW03-C120/50112

Description
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size213KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZW03-C120/50112 Overview

DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZW03-C120/50112 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage114 V
Shell connectionISOLATED
Maximum clamping voltage167 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.75 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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