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BAW56T

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size383KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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BAW56T Overview

Rectifier Diode,

BAW56T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
Reach Compliance Codecompliant
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.075 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAW56T
BAV70T
BAV99T
Technical Data
Data Sheet N1727, Rev. A
BAW56T/BAV70T/BAV99T SWITCHING DIODE
Features
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SOT-523
BAW56T
BAV70T
BAV99T
MARKING:JD
MARKING:JJ
MARKING:JE
Solid dot = Green molding compound device, if none, the normal device.
Maximum Ratings
@T
A
=25°C unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Non-repetitive Peak Forward
Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
R
I
F
I
FSM
P
D
R
ΘJA
T
j
T
stg
Limit
85
75
2.0
150
833
150
-55~+150
Units
V
mA
A
mW
°C/W
°C
°C
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

BAW56T Related Products

BAW56T BAV70T BAV99T
Description Rectifier Diode, Rectifier Diode, Rectifier Diode,
Is it Rohs certified? conform to conform to conform to
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
Reach Compliance Code compliant compliant compliant
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 2 2 2
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 0.075 A 0.075 A 0.075 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.15 W 0.15 W 0.15 W
Maximum repetitive peak reverse voltage 85 V 85 V 85 V
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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