BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Nexperia
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
SC-88
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
Package
configuration
very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
Type number
TO-236AB small
-
-
-
-
leadless ultra
small
very small
ultra small
very small
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
2 pF
Reverse voltage: V
R
90 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
90
4
Unit
A
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
Nexperia
BAV756S; BAW56 series
High-speed switching diodes
2. Pinning information
Table 3.
Pin
BAV756S
1
2
3
4
5
6
anode (diode 1)
cathode (diode 2)
common anode (diode 2 and
diode 3)
cathode (diode 3)
anode (diode 4)
common cathode (diode 1
and diode 4)
cathode (diode 1)
cathode (diode 2)
common anode
1
2
006aaa144
Pinning
Description
Simplified outline
Symbol
6
5
4
6
5
4
1
2
3
1
2
3
006aab103
BAW56; BAW56T; BAW56W
1
2
3
3
3
1
2
006aab099
BAW56M
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
1
3
2
Transparent
top view
1
2
006aab099
3
BAW56S
1
2
3
4
5
6
cathode (diode 1)
cathode (diode 2)
common anode (diode 3 and
diode 4)
cathode (diode 3)
cathode (diode 4)
common anode (diode 1 and
diode 2)
1
2
3
1
2
3
006aab102
6
5
4
6
5
4
BAV756S_BAW56_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 18 March 2015
2 of 16
Nexperia
BAV756S; BAW56 series
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Package
Name
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
SC-88
-
SC-101
SC-88
SC-75
SC-70
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
0.6
0.5 mm
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
Version
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
Type number
4. Marking
Table 5.
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
A7*
A1*
S5
A1*
A1
A1*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
BAV756S_BAW56_SER
Parameter
Conditions
Min
-
-
Max
90
90
250
215
150
250
150
150
©
Unit
V
V
mA
mA
mA
mA
mA
mA
T
s
= 60
C
T
amb
25
C
T
amb
25
C
T
s
= 60
C
T
s
= 90
C
T
amb
25
C
-
-
-
-
-
-
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 18 March 2015
3 of 16
Nexperia
BAV756S; BAW56 series
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
FRM
I
FSM
Parameter
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
s
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Per device
I
F
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[2]
[1]
Conditions
Min
-
Max
500
Unit
mA
-
-
-
-
-
[3]
4
1
0.5
350
250
250
350
170
200
A
A
A
mW
mW
mW
mW
mW
mW
T
s
= 60
C
T
amb
25
C
T
amb
25
C
T
s
= 60
C
T
s
= 90
C
T
amb
25
C
[4]
-
-
-
-
T
s
= 60
C
T
amb
25
C
T
amb
25
C
T
s
= 60
C
T
s
= 90
C
T
amb
25
C
-
-
-
-
-
-
-
65
65
100
125
75
100
75
130
150
+150
+150
mA
mA
mA
mA
mA
mA
C
C
C
junction temperature
ambient temperature
storage temperature
T
j
= 25
C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Single diode loaded.
6. Thermal characteristics
Table 7.
Symbol
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
BAW56
BAW56M
BAW56W
[2]
Thermal characteristics
Parameter
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
500
500
625
K/W
K/W
K/W
BAV756S_BAW56_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 18 March 2015
4 of 16
Nexperia
BAV756S; BAW56 series
High-speed switching diodes
Table 7.
Symbol
R
th(j-sp)
Thermal characteristics
…continued
Parameter
thermal resistance from
junction to solder point
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
[1]
[2]
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
255
360
255
350
300
K/W
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
C
V
R
= 80 V; T
j
= 150
C
C
d
t
rr
V
FR
[1]
[2]
[3]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
[2]
[3]
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
150
2
4
1.75
mV
mV
V
V
nA
A
A
A
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
Pulse test: t
p
300
s;
0.02.
V
R
= 0 V; f = 1 MHz
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV756S_BAW56_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 6 — 18 March 2015
5 of 16
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