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BAW79DE6327

Description
Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size65KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BAW79DE6327 Overview

Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon

BAW79DE6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time1 µs
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications
High breakdown voltage
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAW78D
BAW79D

!

!
Type
BAW78D
BAW79D
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Peak forward current
Package
SOT89
SOT89
Configuration
single
common cathode
Symbol
V
R
V
RM
I
F
I
FM
I
FM
I
FS
I
FSM
P
tot
1
1
T
j
T
stg
150
-65 ... 150
Value
400
400
1
1
1
10
-
Marking
GD
GH
Unit
V
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Surge forward current,
t
= 1 µs
Non-repetitive peak surge forward current
Total power dissipation
BAW78D,
T
S
125°C
BAW79D,
T
S
115°C
Junction temperature
Storage temperature
1
Pb-containing
W
°C
package may be available upon special request
1
2007-04-20

BAW79DE6327 Related Products

BAW79DE6327 BAW78DE6327
Description Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, SOT-89, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction R-PSSO-F3 R-PSSO-F3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.6 V 1.6 V
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 1 W 1 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 400 V
Maximum reverse recovery time 1 µs 1 µs
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form FLAT FLAT
Terminal location SINGLE DUAL
Maximum time at peak reflow temperature 40 40

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