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D2SB20C2

Description
Bridge Rectifier Diode, 2A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size188KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

D2SB20C2 Overview

Bridge Rectifier Diode, 2A, 200V V(RRM),

D2SB20C2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current80 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
D2SB05 thru D2SB80
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated Single-Phase Bridge Rectifier
- Ideal for printed circuit board
- High case dielectric strength
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-
wave superimposed on rated load
Rating of fusing ( t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum reverse current @ rated VR
T
J
=25
o
C
T
J
=125
o
C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θjL
R
θjA
T
J
T
STG
D2SB D2SB D2SB D2SB D2SB D2SB
05
50
35
50
10
100
70
100
20
200
140
200
2
80
26
1.1
10
500
10
47
- 55 to +150
- 55 to +150
O
o
40
400
280
400
60
600
420
600
80
800
560
800
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1408052
Version: I14
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