DH77047-51 datasheet, PDF - EEWORLD Datasheet

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DH77047-51: DescriptionVariable Capacitance Diode, High Frequency to S Band, 8.5pF C(T), 12V, Silicon, Hyperabrupt, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size641KB，56 Pages; ManufacturerTemex Ceramics

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DH77047-51 Overview

Variable Capacitance Diode, High Frequency to S Band, 8.5pF C(T), 12V, Silicon, Hyperabrupt, PLASTIC PACKAGE-3

DH77047-51 Parametric

Parameter Name	Attribute value
Maker	Temex Ceramics
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	12 V
Configuration	SINGLE
Nominal diode capacitance	8.5 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	HIGH FREQUENCY TO S BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Varactor Diode Classification	HYPERABRUPT

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MICROWAVE SILICON COMPONENTS

Contents

MICROWAVE SILICON COMPONENTS

CONTENTS

New

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irit log

ech

PAGE

INTRODUCTION / SYMBOLS

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12-2

SILICON PIN DIODES

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12-4

All speciﬁcations contained in that catalog are subject to change without notice.

SCHOTTKY DIODES

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12-28

TUNING VARACTORS DIODES

...............................................

12-31

POWER GENERATION DIODES

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12-40

CASE STYLES

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12-47

MOS CAPACITORS: Please consult page 7-39 of this catalog

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.net

12-1

Vol. 1

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