BC846W ... BC849W
BC846W ... BC849W
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2
±0.1
0.3
3
NPN
200 mW
SOT-323
0.01 g
Version 2006-06-27
1
±0.1
1.25
±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
2
1.3
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
2.1
±0.1
Grenzwerte (T
A
= 25°C)
BC846W
BC847W
45 V
50 V
6V
200 mW
1
)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
BC848W
BC849W
30 V
30 V
5V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E open
C open
V
CBO
V
CEO
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
80 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE
= 5 V, I
C
= 10 µA
Group A
Group B
Group C
Group A
Group B
Group C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
–
–
–
110
200
420
–
–
Kennwerte (T
j
= 25°C)
Typ.
90
150
270
180
290
520
90 mV
200 mV
Max.
–
–
–
220
450
800
250 mV
600 mV
V
CE
= 5 V, I
C
= 2 mA
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BC846W ... BC849W
Characteristics (T
j
= 25°C)
Min.
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CB
= 30 V, (E open)
V
CE
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current
V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V,
I
C
= i
c
= 0,
f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz,
Δf
= 200 Hz
BC846W ... BC848W
BC849W
F
F
R
thA
–
–
2 dB
1.2 dB
< 620 K/W
1
)
BC856W ... BC859W
BC846AW = 1A
BC847AW = 1E
BC848AW = 1J
BC846BW = 1B
BC847BW = 1F
BC848BW = 1K
BC849BW = 2B
BC847CW = 1G
BC848CW = 1L
BC849CW = 2C
10 dB
4 dB
C
EB0
–
9 pF
–
C
CBO
–
3.5 pF
6 pF
f
T
100 MHz
–
–
I
EB0
–
–
100 nA
I
CB0
I
CB0
–
–
–
–
15 nA
5 µA
V
BE
V
BE
580 mV
–
660 mV
–
700 mV
720 mV
V
BEsat
V
BEsat
–
–
700 mV
900 mV
–
–
Kennwerte (T
j
= 25°C)
Typ.
Max.
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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