®
TAK CHEONG
SEM IC O N DU C TO R
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
Value
500
-65 to +175
+175
Units
mW
°C
°C
L
: Logo
Device Code : TCBZX55Txxx
T
: VZ tolerance B or C
DEVICE MARKING DIAGRAM
AXIAL LEAD
DO35
L
55T
xxx
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Device Type
TCBZX55C 2V0
TCBZX55C 2V2
TCBZX55C 2V4
TCBZX55C 2V7
TCBZX55C 3V0
TCBZX55C 3V3
TCBZX55C 3V6
TCBZX55C 3V9
TCBZX55C 4V3
TCBZX55C 4V7
TCBZX55C 5V1
TCBZX55C 5V6
TCBZX55C 6V2
TCBZX55C 6V8
TCBZX55C 7V5
TCBZX55C 8V2
TCBZX55C 9V1
TCBZX55C 10
TCBZX55C 11
TCBZX55C 12
TCBZX55C 13
V
Z
@ I
ZT
(Volts)
Min
Max
1.88
2.11
2.08
2.33
2.28
2.56
2.51
2.89
2.8
3.2
3.1
3.5
3.4
3.8
3.7
4.1
4.0
4.6
4.4
5.0
4.8
5.4
5.2
6.0
5.8
6.6
6.4
7.2
7.0
7.9
7.7
8.7
8.5
9.6
9.4
10.6
10.4
11.6
11.4
12.7
12.4
14.1
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
I
R
@ V
R
(μA)
Max
100
100
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
Number: DB-034
June 2008 / F
Page 1
TCBZX55C2V0 through TCBZX55C75
TCBZX55B2V4 through TCBZX55B75
®
TAK CHEONG
SEM IC O N DU C TO R
Electrical Characteristics
Device Type
V
Z
@ I
ZT
(Volts)
Min
Max
TCBZX55C 15
13.8
15.6
5
30
TCBZX55C 16
15.3
17.1
5
40
TCBZX55C 18
16.8
19.1
5
50
TCBZX55C 20
18.8
21.1
5
55
TCBZX55C 22
20.8
23.3
5
55
TCBZX55C 24
22.8
25.6
5
80
TCBZX55C 27
25.1
28.9
5
80
TCBZX55C 30
28
32
5
80
TCBZX55C 33
31
35
5
80
TCBZX55C 36
34
38
5
80
TCBZX55C 39
37
41
2.5
90
TCBZX55C 43
40
46
2.5
90
TCBZX55C 47
44
50
2.5
110
TCBZX55C 51
48
54
2.5
125
TCBZX55C 56
52
60
2.5
135
TCBZX55C 62
58
66
2.5
150
TCBZX55C 68
64
72
2.5
160
TCBZX55C 75
70
80
2.5
170
V
F
Forward Voltage = 1.0 V Maximum @
I
F
= 100 mA for all types
V
Z
@ I
ZT
(Volts)
Min
Max
2.35
2.45
2.65
2.75
2.94
3.06
3.23
3.37
3.53
3.67
3.82
3.98
4.21
4.39
4.61
4.79
5.00
5.20
5.49
5.71
6.08
6.32
6.66
6.94
7.33
7.63
8.04
8.36
8.92
9.28
9.80
10.20
10.78
11.22
11.76
12.24
12.74
13.26
14.70
15.30
15.68
16.32
17.64
18.36
19.60
20.40
21.56
22.44
23.52
24.48
26.46
27.54
29.40
30.60
32.34
33.66
35.28
36.72
38.22
39.78
42.14
43.86
46.06
47.94
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
I
R
@ V
R
(μA)
Max
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
Device Type
TCBZX55B 2V4
TCBZX55B 2V7
TCBZX55B 3V0
TCBZX55B 3V3
TCBZX55B 3V6
TCBZX55B 3V9
TCBZX55B 4V3
TCBZX55B 4V7
TCBZX55B 5V1
TCBZX55B 5V6
TCBZX55B 6V2
TCBZX55B 6V8
TCBZX55B 7V5
TCBZX55B 8V2
TCBZX55B 9V1
TCBZX55B 10
TCBZX55B 11
TCBZX55B 12
TCBZX55B 13
TCBZX55B 15
TCBZX55B 16
TCBZX55B 18
TCBZX55B 20
TCBZX55B 22
TCBZX55B 24
TCBZX55B 27
TCBZX55B 30
TCBZX55B 33
TCBZX55B 36
TCBZX55B 39
TCBZX55B 43
TCBZX55B 47
Number: DB-034
June 2008 / F
Z
ZT
@ I
ZT
(Ω)
Max
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
I
R
@ V
R
(μA)
Max
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
Page 2
®
TAK CHEONG
SEM IC O N DU C TO R
Electrical Characteristics
Device Type
V
Z
@ I
ZT
(Volts)
Min
Max
TCBZX55B 51
49.98
52.02
2.5
125
TCBZX55B 56
54.88
57.12
2.5
135
TCBZX55B 62
60.76
63.24
2.5
150
TCBZX55B 68
66.64
69.36
2.5
160
TCBZX55B 75
73.50
76.50
2.5
170
V
F
Forward Voltage = 1.0 V Maximum @
I
F
= 100 mA for all types
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
I
ZK
(mA)
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
700
1000
1000
1000
1000
I
R
@ V
R
(μA)
Max
0.1
0.1
0.1
0.1
0.1
V
R
(Volts)
38
42
47
51
56
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (V
Z
) MEASUREMENT
The zener voltage is measured under pulse conditions such that T
J
is no more than 2℃ above T
A
.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (I
ZT
) is superimposed to
I
ZT
.
Number: DB-034
June 2008 / F
Page 3
®
TAK CHEONG
SEM IC O N DU C TO R
Typical Characteristics
600
1000
Total Capacitance [pF]
f = 1MHz
Ta = 25
℃
100
VR = 0V
VR = 2V
VR = 5V
PD-Power Passipation [mW]
500
400
300
200
100
VR = 20V
10
VR = 30V
0
0
40
1
Temperature [
℃
]
80
120
160
200
0
20
40
VZ - Reverse Voltage [V]
60
80
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
Differential Zener Impedance [Ω]
1000
1000
Iz=1mA
Iz=2mA
Ta = 25
℃
Forward Current [mA]
100
Ta = 25
℃
100
Iz=5mA
Iz=10mA
10
10
1
1
0.1
1
10
VZ - Reverse Voltage [V]
100
0.1
0
0.2
0.4
0.6
0.8
VF - Forw ard Voltage [m V]
1
1.2
Figure 3. Differential Impedance vs. Zener Voltage
Figure 4. Forward Current vs. Forward Voltage
300
250
Reverse Current [mA]
200
150
100
50
0
0
2
4
6
VZ - Reverse Voltage [V]
8
10
PD = 500mW
Ta = 25
℃
100
PD = 500mW
Ta = 25
℃
Reverse Current [mA]
10
1
0.1
0.01
15
25
35
45
55
65
VZ - Reverse Voltage [V]
75
Figure 5. Reverse Current vs. Reverse Voltage
Figure 6. Reverse Current vs. Reverse Voltage
Number: DB-034
June 2008 / F
Page 4
®
TAK CHEONG
SEM IC O N DU C TO R
Package Outline
Package
Case Outline
DO-35
DIM
Min
A
B
C
D
0.46
3.05
25.40
1.53
Millimeters
Max
0.55
5.08
38.10
2.28
DO-35
Inches
Min
0.018
0.120
1.000
0.060
Max
0.022
0.200
1.500
0.090
Notes:
1.
2.
All dimensions are within JEDEC standard.
DO35 polarity denoted by cathode band.
Number: DB-034
June 2008 / F
Page 5
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