®
TAK CHEONG
SEMI CO N D U C T O R
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
Value
500
-65 to +175
+175
Units
mW
°C
°C
L
: Logo
Device Code : TCBZX79Txxx
T
: VZ tolerance B or C
DEVICE MARKING DIAGRAM
AXIAL LEAD
DO35
L
79T
xxx
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Device Type
TCBZX79C 2V0
TCBZX79C 2V2
TCBZX79C 2V4
TCBZX79C 2V7
TCBZX79C 3V0
TCBZX79C 3V3
TCBZX79C 3V6
TCBZX79C 3V9
TCBZX79C 4V3
TCBZX79C 4V7
TCBZX79C 5V1
TCBZX79C 5V6
TCBZX79C 6V2
TCBZX79C 6V8
TCBZX79C 7V5
TCBZX79C 8V2
TCBZX79C 9V1
TCBZX79C 10
TCBZX79C 11
TCBZX79C 12
TCBZX79C 13
Number: DB-033
June 2008 / F
V
Z
@ I
ZT
(Volts)
Min
Max
1.88
2.12
2.08
2.33
2.28
2.56
2.51
2.89
2.8
3.2
3.1
3.5
3.4
3.8
3.7
4.1
4
4.6
4.4
5
4.8
5.4
5.2
6
5.8
6.6
6.4
7.2
7
7.9
7.7
8.7
8.5
9.6
9.4
10.6
10.4
11.6
11.4
12.7
12.4
14.1
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
I
R
@ V
R
(μA)
Max
150
150
100
75
50
25
15
10
5
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
V
R
(Volts)
1
1
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
Page
1
TCBZX79C2V0 through TCBZX79C75
TCBZX79B2V4 through TCBZX79B75
®
TAK CHEONG
SEMI CO N D U C T O R
Electrical Characteristics
Device Type
V
Z
@ I
ZT
(Volts)
Min
Max
TCBZX79C 15
13.8
15.6
5
30
TCBZX79C 16
15.3
17.1
5
40
TCBZX79C 18
16.8
19.1
5
45
TCBZX79C 20
18.8
21.2
5
55
TCBZX79C 22
20.8
23.3
5
55
TCBZX79C 24
22.8
25.6
5
70
TCBZX79C 27
25.1
28.9
2
80
TCBZX79C 30
28
32
2
80
TCBZX79C 33
31
35
2
80
TCBZX79C 36
34
38
2
90
TCBZX79C 39
37
41
2
130
TCBZX79C 43
40
46
2
150
TCBZX79C 47
44
50
2
170
TCBZX79C 51
48
54
2
180
TCBZX79C 56
52
60
2
200
TCBZX79C 62
58
66
2.5
215
TCBZX79C 68
64
72
2.5
240
TCBZX79C 75
70
80
2.5
255
V
F
Forward Voltage = 1.5 V Maximum @
I
F
= 100 mA for all types
Device Type
TCBZX79B 2V4
TCBZX79B 2V7
TCBZX79B 3V0
TCBZX79B 3V3
TCBZX79B 3V6
TCBZX79B 3V9
TCBZX79B 4V3
TCBZX79B 4V7
TCBZX79B 5V1
TCBZX79B 5V6
TCBZX79B 6V2
TCBZX79B 6V8
TCBZX79B 7V5
TCBZX79B 8V2
TCBZX79B 9V1
TCBZX79B 10
TCBZX79B 11
TCBZX79B 12
TCBZX79B 13
TCBZX79B 15
TCBZX79B 16
TCBZX79B 18
TCBZX79B 20
TCBZX79B 22
TCBZX79B 24
TCBZX79B 27
TCBZX79B 30
TCBZX79B 33
TCBZX79B 36
TCBZX79B 39
TCBZX79B 43
TCBZX79B 47
TCBZX79B 51
Number: DB-033
June 2008 / F
V
Z
@ I
ZT
(Volts)
Min
Max
2.35
2.45
2.65
2.75
2.94
3.06
3.23
3.37
3.53
3.67
3.82
3.98
4.21
4.39
4.61
4.79
5.00
5.20
5.49
5.71
6.08
6.32
6.66
6.94
7.33
7.63
8.04
8.36
8.92
9.28
9.80
10.20
10.78
11.22
11.76
12.24
12.74
13.26
14.70
15.30
15.68
16.32
17.64
18.36
19.60
20.40
21.56
22.44
23.52
24.48
26.46
27.54
29.40
30.60
32.34
33.66
35.28
36.72
38.22
39.78
42.14
43.86
46.06
47.94
49.98
52.02
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
I
ZK
(mA)
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
1000
1000
1000
I
R
@ V
R
(μA)
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(Volts)
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
Z
ZT
@ I
ZT
(Ω)
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
I
R
@ V
R
(μA)
Max
100
75
50
25
15
10
5
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(Volts)
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
Page
2
®
TAK CHEONG
SEMI CO N D U C T O R
Electrical Characteristics
Device Type
V
Z
@ I
ZT
(Volts)
Min
Max
TCBZX79B 56
54.88
57.12
2
200
TCBZX79B 62
60.76
63.24
2.5
215
TCBZX79B 68
66.64
69.36
2.5
240
TCBZX79B 75
73.50
76.50
2.5
255
V
F
Forward Voltage = 1.5 V Maximum @
I
F
= 100 mA for all types
T
A
= 25°C unless otherwise noted
Z
ZT
@ I
ZT
I
ZT
(Ω)
(mA)
Max
I
ZK
(mA)
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
425
430
447
470
I
R
@ V
R
(μA)
Max
0.05
0.05
0.05
0.05
V
R
(Volts)
39.2
43.4
47.6
52.5
Notes:
1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers listed have zener voltage as shown.
2. SPECIALS AVAILABLE INCLUDE
Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery,
contact you nearest Tak Cheong representative.
3. ZENER VOLTAGE (V
Z
) MEASUREMENT
The zener voltage is measured under pulse conditions such that T
J
is no more than 2℃ above T
A
.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the
dc zener current (I
ZT
) is superimposed to
I
ZT
.
Number: DB-033
June 2008 / F
Page
3
®
TAK CHEONG
SEMI CO N D U C T O R
Typical Characteristics
600
1000
Total Capacitance [pF]
f = 1MHz
Ta = 25
℃
100
VR = 0V
VR = 2V
VR = 5V
PD-Power Passipation [mW]
500
400
300
200
100
VR = 20V
10
VR = 30V
0
0
40
1
Temperature [
℃
]
80
120
160
200
0
20
40
VZ - Reverse Voltage [V]
60
80
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
Differential Zener Impedance [Ω]
1000
1000
Iz=1mA
Iz=2mA
Ta = 25
℃
Forward Current [mA]
100
Ta = 25
℃
100
Iz=5mA
Iz=10mA
10
10
1
1
0.1
1
10
VZ - Reverse Voltage [V]
100
0.1
0
0.2
0.4
0.6
0.8
VF - Forw ard Voltage [m V]
1
1.2
Figure 3. Differential Impedance vs. Zener Voltage
Figure 4. Forward Current vs. Forward Voltage
300
250
Reverse Current [mA]
200
150
100
50
0
0
2
4
6
VZ - Reverse Voltage [V]
8
10
PD = 500mW
Ta = 25
℃
100
PD = 500mW
Ta = 25
℃
Reverse Current [mA]
10
1
0.1
0.01
15
25
35
45
55
65
VZ - Reverse Voltage [V]
75
Figure 5. Reverse Current vs. Reverse Voltage
Figure 6. Reverse Current vs. Reverse Voltage
Number: DB-033
June 2008 / F
Page
4
®
TAK CHEONG
SEMI CO N D U C T O R
Package Outline
Package
Case Outline
DO-35
DIM
Min
A
B
C
D
0.46
3.05
25.40
1.53
Millimeters
Max
0.55
5.08
38.10
2.28
DO-35
Inches
Min
0.018
0.120
1.000
0.060
Max
0.022
0.200
1.500
0.090
Notes:
1.
2.
All dimensions are within JEDEC standard.
DO35 polarity denoted by cathode band.
Number: DB-033
June 2008 / F
Page
5
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