EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFW830A

Description
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size220KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

IRFW830A Overview

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

IRFW830A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionD2PAK-3
Contacts3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)338 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)4.5 A
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.1 W
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ V
DS
= 500V
Lower R
DS(ON)
: 1.169Ω (Typ.)
IRFW/I830A
BV
DSS
= 500 V
R
DS(on)
= 1.5Ω
I
D
= 4.5 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25°C) *
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
500
4.5
2.9
18
±30
338
4.5
8
3.5
3.1
80
0.64
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.57
40
62.5
°C/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation

IRFW830A Related Products

IRFW830A IRFI830A
Description Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction D2PAK-3 I2PAK-3
Contacts 3 3
Reach Compliance Code compliant compliant
Avalanche Energy Efficiency Rating (Eas) 338 mJ 338 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 4.5 A 4.5 A
Maximum drain current (ID) 4.5 A 4.5 A
Maximum drain-source on-resistance 1.5 Ω 1.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 3.1 W 3.1 W
Maximum pulsed drain current (IDM) 18 A 18 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Activation of the algorithm library
Activating and using algorithm libraries In addition to the functions introduced in the previous section, the BlueMS app has several additional algorithm libraries. Here is how to activate and use the...
cz0842 MEMS sensors
A high quality 2 kb/s language coding algorithm MWI(2)
[size=9pt][b]3 Encoder[/b][/size] [size=9pt][b]3.1 Preprocessing[/b][/size] [size=9pt] In MWI, the speech signal first passes through a high-pass filter (see Figure 1) to remove the DC component and 5...
songbo DSP and ARM Processors
MSP430F5529 general I/O port settings 2
This section discusses external interrupts. Reading the introduction and understanding the program is the best way. External interrupts are the lowest priority interrupts of MSP430 and are maskable in...
fish001 Microcontroller MCU
Phase noise basics and test principles and methods as frequency source (LO)
The phase noise index has a very obvious impact on current RF microwave systems, mobile communication systems, radar systems and other electronic systems, and will directly affect the quality of syste...
btty038 RF/Wirelessly
About AVR's external counting problem (newbie help)
I am a novice. As far as I know, AVR has three timers/counters. Since I have used T/c1 as two-way PWM output, I need two ports to be used as external counters. But I found that only T0 has this functi...
spyzhuxiang Microchip MCU
NFC Link Software
[media=x,500,375]http://v.youku.com/v_show/id_XNTc3NjQ0NTY0.html[/media]...
德州仪器_视频 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 970  165  2155  2193  1633  20  4  44  45  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号