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HY51VS65803HGLT-6

Description
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Categorystorage    storage   
File Size433KB,11 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY51VS65803HGLT-6 Overview

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

HY51VS65803HGLT-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
Parts packaging codeTSOP2
package instructionTSOP2, TSOP32,.46
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length20.95 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.0002 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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