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BZT52C3V0

Description
Zener Diode, 3V V(Z), 6.66%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size209KB,4 Pages
ManufacturerRectron
Environmental Compliance  
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BZT52C3V0 Overview

Zener Diode, 3V V(Z), 6.66%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2

BZT52C3V0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.66%
Working test current5 mA
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BZT52C2V4-
BZT52C39
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 500 mWatts
FEATURES
*
*
*
*
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose Medium Current
Ideally Suited for Automated Assembly Processes
SOD-123
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.80)
.102(2.60)
.067(1.70)
.059(1.50)
.026(.65)
.018(.45)
.152(3.85)
.140(3.55)
.006(.15)
.003(.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
.049(1.25)
.041(1.05)
.004(.10)
.000(.00)
REF .020(0.50)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation @T
A
=25
o
C (Note 1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
D
T
J
T
STG
VALUE
500
-65 to +150
-65 to +150
UNITS
mW
o
o
C
C
o
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (Note 1)
Max. Instantaneous Forward Voltage at I
F=
10mA
SYMBOL
R
θ
JA
V
F
MIN.
-
-
TYP.
-
-
MAX.
305
0.9
UNITS
o
C/W
Volts
2006-3
Note 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
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