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BAS516-TP-HF

Description
Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size279KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BAS516-TP-HF Overview

Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-2

BAS516-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionHALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAS516
Features
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Ultra-Small Surface Mount Package
High
Switching Speed
For General Purpose Switching Applications
Marking : 61
Halogen
free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Switching Diode
SOD-523
A
B
Maximum Ratings
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
C
E
G
Electrical Characteristics @ 25 C Unless Otherwise Specified
DC Reverse Voltage
Forward Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Diode
Capacitance
V
R
I
F
I
FSM
75V
250mA
500mA
715mV
815mV
1000mV
1250mV
0.03
A
1 A
C
D
1pF
I
F
= 1mA
I
F
= 10mA;
I
F
=
50mA
I
F
= 150mA
V
R
=25Volts
V
R
=75Volts
Measured at
1.0MHz, V
R
=0V
I
F
=I
R
=10mAdc,
V
R
= 0V
R
L
=100
D
F
H
DIMENSIONS
INCHES
DIM
A
B
C
D
E
F
G
H
MIN
.059
.043
.030
.001
.010
.003
.020
.020
MAX
.067
.051
.033
.003
.014
.006
.028
.031
MIN
1.50
1.10
0.75
0.01
0.25
0.08
0.50
0.51
MM
MAX
1.70
1.30
0.85
0.07
0.35
0.15
0.70
0.77
NOTE
V
F
I
R
Suggested Solder Pad Layout
1.1mm
Junction temperature
Reverse Recovery
Time
Tj
T
rr
150
4nS
0.8mm
0.6mm
www.mccsemi.com
Revision:
C
1 of 3
2013/01/01
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