TFA10x Series
Reverse Blocking Triode Thyristor
Features and Benefits
▪
Exceptional reliability
▪
Small fully-molded SIP package with heatsink mounting
for high thermal dissipation and long life
▪
Operating junction temperature to 150°C
▪
V
DRM
of 700 or 800 V
▪
15.7 A
RMS
on-state current
▪
7 mA typical gate trigger current
▪
Uniform switching
▪
UL Recognized Component (File No.: E118037) (suffix I)
Description
This Sanken reverse blocking triode thyristor is designed for
AC power control, providing reliable, uniform switching for
half-cycle AC applications.
In comparison with other products on the market, the TFA10x
series provides increased isolation voltage (1800 VAC
RMS
),
guaranteed for up to 1 minute. In addition, commutation
dv/dt is improved.
Package: 3-pin SIP (TO-220F)
Applications
▪
Motor control for small tools
▪
Temperature control, light dimmers, electric blankets
▪
General use switching mode power supplies (SMPS)
Not to scale
Typical Applications
M
Single-phase motor control (for example, electric tool)
In-rush current control (for example, SMPS)
28105.04, Rev. 1
TFA10x
Series
Selection Guide
Part Number
TFA107(I)
TFA107S
TFA108(I)
TFA108S
Reverse Blocking Triode Thyristor
V
DRM
(V)
700
700
800
800
UL-Recognized
Component
Yes
–
Yes
–
Package
3-pin fully molded SIP with
heatsink mount
Packing
50 pieces per tube
Absolute Maximum Ratings
Characteristic
Peak Repetitive Off-State Voltage
Isolation Voltage
Average On-State Current
RMS On-State Current
Surge On-State Current
I
2
t Value for Fusing
Critical Rising Rate of On-State Current
Peak Forward Gate Current
Peak Forward Gate Voltage
Peak Reverse Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
DRM
V
ISO
I
T(AV)
I
T(RMS)
f = 60 Hz
I
TSM
I
2
t
di/dt
I
FGM
V
FGM
V
RGM
P
GM
P
GM(AV)
T
J
T
stg
Half cycle sine wave, single, non-repetitive
f = 50 Hz
Value for 50 Hz half cycle sine wave, 1 cycle, I
TSM
= 160 A
I
T
= I
T(RMS)
×
π,
V
D
= V
DRM
× 0.5, f
≤
60 Hz, t
gw
≥
10
μs,
t
gr
≤
250
ns, i
gp
≥
30 mA (refer to Gate Trigger Circuit diagram)
f
≥
50 Hz, duty cycle
≤
10%
f
≥
50 Hz, duty cycle
≤
10%
f
≥
50 Hz
f
≥
50 Hz, duty cycle
≤
10%
T
J
< T
J
(max)
160
128
50
2.0
10
5.0
5.0
0.5
–40 to 150
–40 to 150
A
A
2
• s
A/μs
A
V
V
W
W
ºC
ºC
Notes
Rating
700
800
1800
10.0
15.7
176
Units
V
V
V
A
A
A
TFA107x
TFA108x
T
J
= –40°C to 150°C, R
GREF
= 1 kΩ
AC RMS applied for 1 minute between lead and case
50 Hz half cycle sine wave, Conduction angle (α)
=
180°,
continuous operation, T
C
= 86°C
Thermal Characteristics
May require derating at maximum conditions
Characteristic
Package Thermal Resistance
(Junction to Case)
Symbol
R
θJC
For AC
Test Conditions
Value
3.4
Units
ºC/W
Pin-out Diagram
A
Number
Terminal List Table
Name
K
A
G
Function
Cathode terminal
Anode terminal
Gate control
1
2
3
G
K
1 2 3
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, T
A
, of 25°C, unless otherwise stated.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2
TFA10x
Series
Reverse Blocking Triode Thyristor
ELECTRICAL CHARACTERISTICS
Characteristics
Off-State Leakage Current
Reverse Leakage Current
On-State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non-trigger Voltage
Holding Current
Critical Rising Rate of
Off-State Voltage
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
Test Conditions
V
D
= V
DRM
, T
J
= 150°C, R
GREF
= 1 kΩ
V
D
= V
DRM
, T
J
= 150°C, R
GREF
= 1 kΩ
I
TM
= 20 A, T
C
= 25°C
V
D
= 6 V, R
L
= 10
Ω,
T
C
= 25°C
V
D
= 6 V, R
L
= 10
Ω,
T
C
= 25°C
V
D
= V
DRM
× 0.5, R
GREF
= 1 kΩ, T
J
= 125°C
R
GREF
= 1 kΩ, T
J
= 25°C
V
D
= V
DRM
× 0.5, T
J
= 125°C, R
GREF
= 1 kΩ,
C
GREF
= 0.033
μF
Min.
–
–
–
–
–
0.2
–
–
Typ.
–
–
–
–
7
–
20
300
Max.
2.0
2.0
1.35
1.0
15
–
–
–
Unit
mA
mA
V
V
mA
V
mA
V/μs
Test Circuit 1
Voltage-Current Characteristic
I
TM
A
I
F
V
TM
(On state)
R
GREF
G
K
V
RRM
V
R
I
RRM
I
H
(Off state)
V
TM
V
DRM
C
GREF
I
DRM
V
F
Gate Trigger Current
t
gr
I
R
i
gp
t
gw
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3
TFA10x
Series
Reverse Blocking Triode Thyristor
Commutation Timing Diagrams
Supply VAC
= Conduction angle
V
GT
V
GATE
I
TSM
On-State
Currrent
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
TFA10x
Series
Reverse Blocking Triode Thyristor
Performance Characteristics at T
A
= 25°C
100
200
180
T
J
= 150°C
160
140
I
TSM
(A)
Surge On-State
Current versus
Quantity of
Cycles
I
T
(max) (A)
10
Maximum On-State
Current versus
Maximum On-State
Voltage
120
100
80
60
40
20
1
T
J
= 25°C
0
0.6
1.0
1.4
16
14
12
Maximum Average
Power Dissipation
versus Average
On-State Current
P
T(AV)
(W)
1.8
2.2
2.6
V
T
(max) (V)
3.0
3.4
0
200
180
1
10
Quantity of Cycles
Half cycle sine wave
100
Half cycle sine wave
= 180°
= 120°
= 90°
= 60°
= 30°
T
C
(°C)
160
Maximum Allowable
Case Temperature
120
versus Average
100
On-State Current
140
10
8
6
4
2
0
80
60
40
20
= 30°
= 60°
= 90°
= 120°
= 180°
0
2
4
6
8
I
T(AV)
(A)
10
12
14
0
0
2
4
6
8
I
T(AV)
(A)
10
12
14
100
2
I
GM
= 2 A
10
Gate Voltage
versus
Gate Current
V
GM
= 10 V
V
GT
(V)
V
G
(V)
1
V
GT
(–40°C)
= 1.5 V
V
GT
(25°C)
=1V
P
GM
=5W
P
G(AV)
= 0.5 W
I
GT
(–40°C)
= 30 mA
I
GT
(25°C) = 15 mA
V
GD
(125°C)= 0.2 V
Typical Gate
Trigger Voltage
versus
Junction Temperature
at V
D
= 6 V
and R
L
= 10
Ω
1
0.1
10
100
I
G
(mA)
1000
10 000
0
–60
–20
20
60
T
J
(°C)
100
140
100
R
GREF
= 10 kΩ
100
Typical Gate
Trigger Current
versus
Junction Temperature
at V
D
= 6 V
and R
L
= 10
Ω
10
I
GT
(mA)
1
Typical
Holding Current
versus
Junction Temperature
at R
GREF
= 10 kΩ
10
I
H
(mA)
1
0.1
–60
–20
20
60
T
J
(°C)
100
140
0.1
–60
–20
20
60
T
J
(°C)
100
140
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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